DZT651 LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DZT751) 2 1 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 1 BASE Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking Information: See Page 4 EMITTER TOP VIEW Ordering Information: See Page 4 Schematic and Pin Configuration Weight: 0.115 grams Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Continuous Collector Current 3 A I C Peak Pulse Collector Current I 6 A CM Thermal Characteristics Characteristic Symbol Value Unit 1 (Note 3) W Power Dissipation T = 25C P A D 2 (Note 4) 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics (Note 5) Collector-Base Breakdown Voltage V 80 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 60 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C 0.1 A V = 60V, I = 0 CB E Collector Cutoff Current I CBO 10 A V = 60V, I = 0, T = 100C CB E A Emitter Cutoff Current I 0.1 A V = 4V, I = 0 EBO EB C On Characteristics (Note 5) I = 1A, I = 100mA 0.08 0.3 V C B Collector-Emitter Saturation Voltage V CE(SAT) 0.23 0.6 V I = 3A, I = 300mA C B Base-Emitter Saturation Voltage 0.85 1.25 V V I = 1A, I = 100mA BE(SAT) C B Base-Emitter Turn-On Voltage V 0.8 1 V V = 2V, I = 1A BE(ON) CE C V = 2V, I = 50mA 70 200 CE C 300 V = 2V, I = 500mA 100 200 CE C DC Current Gain h FE 80 185 V = 2V, I = 1A CE C 40 120 V = 2V, I = 2A CE C AC Characteristics Transition Frequency f 140 200 MHz V = 5V, I = 100mA, f = 100MHz T CE C Output Capacitance 30 pF C V = 10V, f = 1MHz obo CB t 35 ns V = 10V, I = 500mA on CC C Switching Times 230 ns t I = I = 50mA off B1 B2 Notes: 5. Pulse Test: Pulse width 300s. Duty cycle 2.0%. 1.2 2.0 1.8 I = 10mA B 1.0 1.6 I = 8mA B 1.4 0.8 1.2 I = 6mA B 0.6 1.0 0.8 I = 4mA B 0.4 0.6 0.4 I = 2mA 0.2 B 0.2 0.0 0 25 50 75 100 125 150 175 01 2 3 4 5 0 V , COLLECTOR EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DS30809 Rev. 3 - 2 2 of 4 DZT651 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D I , COLLECTOR CURRENT (A) C