MMBT4126LT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: Human Body Model: > 4000 V Machine Model: > 400 V COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 25 Vdc CEO CollectorBase Voltage V 25 Vdc CBO 3 EmitterBase Voltage V 4 Vdc EBO Collector CurrentContinuous I 200 mAdc 1 C 2 THERMAL CHARACTERISTICS SOT23 Characteristic Symbol Max Unit CASE 318 Total Device Dissipation FR5 Board P D STYLE 6 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 556 C/W JA (Note 1) Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C C3 M Thermal Resistance, JunctiontoAmbient R 417 C/W JA (Note 2) Junction and Storage Temperature Range T , T 55 to +150 C J stg C3 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. FR5 = 1.0 0.75 0.062 in. *Date Code orientation and/or overbar may 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT4126LT1G SOT23 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 Rev. 3 MMBT4126LT1/DMMBT4126LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 25 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 25 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) E C 4 Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) CE EB 50 ON CHARACTERISTICS (Note 3) DC Current Gain H FE (I = 2.0 mAdc, V = 1.0 Vdc) 120 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10 EB C SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 120 480 C CE (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2.5 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL TRANSIENT CHARACTERISTICS T = 25C J T = 125C J 10 5000 V = 40 V CC 3000 7.0 I /I = 10 C B 2000 C 5.0 obo 1000 700 C ibo 500 3.0 300 200 2.0 Q T Q A 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 1. Capacitance Figure 2. Charge Data www.onsemi.com 2 CAPACITANCE (pF) Q, CHARGE (pC)