Product Information

MMBT4126LT1G

Hot MMBT4126LT1G electronic component of ON Semiconductor

Datasheet
Bipolar (BJT) Transistor PNP 25 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0238 ea
Line Total: USD 71.4

37830 - Global Stock
Ships to you between
Fri. 06 Oct to Thu. 12 Oct
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1

Stock Image

MMBT4126LT1G
ON Semiconductor

1 : USD 0.1486
10 : USD 0.077
25 : USD 0.0762
50 : USD 0.0677
100 : USD 0.0406
250 : USD 0.0399
500 : USD 0.0399
1000 : USD 0.0399

37830 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 3000
Multiples : 3000

Stock Image

MMBT4126LT1G
ON Semiconductor

3000 : USD 0.0238
6000 : USD 0.0236
9000 : USD 0.0234
15000 : USD 0.0231
24000 : USD 0.0229
30000 : USD 0.0225
45000 : USD 0.0222
75000 : USD 0.0217
99000 : USD 0.0217
150000 : USD 0.0217

11583 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1

Stock Image

MMBT4126LT1G
ON Semiconductor

1 : USD 0.077
10 : USD 0.0762
25 : USD 0.0646
100 : USD 0.0455
250 : USD 0.0356
500 : USD 0.029
1000 : USD 0.0284
3000 : USD 0.0284
6000 : USD 0.0284

59011 - Global Stock


Ships to you between Thu. 12 Oct to Mon. 16 Oct

MOQ : 1
Multiples : 1

Stock Image

MMBT4126LT1G
ON Semiconductor

1 : USD 0.2565
10 : USD 0.1755
100 : USD 0.0823
1000 : USD 0.045
3000 : USD 0.0375
9000 : USD 0.0287
24000 : USD 0.0264
45000 : USD 0.024
99000 : USD 0.0216

37830 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 3000
Multiples : 3000

Stock Image

MMBT4126LT1G
ON Semiconductor

3000 : USD 0.0238
6000 : USD 0.0236
9000 : USD 0.0234
15000 : USD 0.0231
24000 : USD 0.0229
30000 : USD 0.0225
45000 : USD 0.0207
75000 : USD 0.0203

11583 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 334
Multiples : 1

Stock Image

MMBT4126LT1G
ON Semiconductor

334 : USD 0.0352
500 : USD 0.0348
1000 : USD 0.034

     
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Mounting Style
Smd/Smt
Package / Case
SOT - 23 - 3
Transistor Polarity
Pnp
Configuration
Single
Maximum DC Collector Current
0.2 A
Collector- Emitter Voltage VCEO Max
- 25 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
4 V
Collector-Emitter Saturation Voltage
- 0.4 V
Gain Bandwidth Product fT
250 Mhz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Series
Mmbt4126lt1
Packaging
Reel
Dc Current Gain Hfe Max
300
Brand
On Semiconductor
Continuous Collector Current
- 0.2 A
Dc Collector/Base Gain Hfe Min
120
Maximum Power Dissipation
225 mW
Factory Pack Quantity :
3000
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MMBT4126LT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: Human Body Model: > 4000 V Machine Model: > 400 V COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 25 Vdc CEO CollectorBase Voltage V 25 Vdc CBO 3 EmitterBase Voltage V 4 Vdc EBO Collector CurrentContinuous I 200 mAdc 1 C 2 THERMAL CHARACTERISTICS SOT23 Characteristic Symbol Max Unit CASE 318 Total Device Dissipation FR5 Board P D STYLE 6 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 556 C/W JA (Note 1) Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C C3 M Thermal Resistance, JunctiontoAmbient R 417 C/W JA (Note 2) Junction and Storage Temperature Range T , T 55 to +150 C J stg C3 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. FR5 = 1.0 0.75 0.062 in. *Date Code orientation and/or overbar may 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT4126LT1G SOT23 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 Rev. 3 MMBT4126LT1/DMMBT4126LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 25 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 25 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) E C 4 Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) CE EB 50 ON CHARACTERISTICS (Note 3) DC Current Gain H FE (I = 2.0 mAdc, V = 1.0 Vdc) 120 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10 EB C SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 120 480 C CE (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 2.5 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL TRANSIENT CHARACTERISTICS T = 25C J T = 125C J 10 5000 V = 40 V CC 3000 7.0 I /I = 10 C B 2000 C 5.0 obo 1000 700 C ibo 500 3.0 300 200 2.0 Q T Q A 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 1. Capacitance Figure 2. Charge Data www.onsemi.com 2 CAPACITANCE (pF) Q, CHARGE (pC)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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