X-On Electronics has gained recognition as a prominent supplier of 2SC4117-BL,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC4117-BL,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC4117-BL,LF Toshiba

2SC4117-BL,LF electronic component of Toshiba
2SC4117-BL,LF Toshiba
2SC4117-BL,LF Bipolar Transistors - BJT
2SC4117-BL,LF  Semiconductors

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See Product Specifications
Part No. 2SC4117-BL,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Datasheet: 2SC4117-BL,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7843: USD 0.0342 ea
Line Total: USD 268.23 
Availability - 0
MOQ: 7843  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 23 May to Thu. 29 May
MOQ : 7843
Multiples : 1
7843 : USD 0.0342
8696 : USD 0.0309

0
Ship by Wed. 21 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 0.5481
10 : USD 0.4428
100 : USD 0.0979
500 : USD 0.0616
1000 : USD 0.0421
3000 : USD 0.0346
9000 : USD 0.0292
24000 : USD 0.0281
45000 : USD 0.0259

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC4117-BL,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4117-BL,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO JEDEC Collector current I 100 mA C JEITA SC-70 Base current I 20 mA B TOSHIBA 2-2E1A P (Note 2, 4) 200 C Collector power dissipation mW P (Note 3) 100 C Weight: 0.006 g (typ.) T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm 3) Start of commercial production 1987-01 2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SC4117 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 120 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C hFE DC current gain V 6 V, I 2 mA 200 700 CE C (Note) Collector-emitter saturation voltage V I 10 mA, I 1 mA 0.3 V CE (sat) C B Transition frequency f V 6 V, I 1 mA 100 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 3.0 pF ob CB E VCE 6 V, IC 0.1 mA, f 1 kHz, Noise figure NF 1.0 10 dB R 10 k G Note: h classification GR (G): 200 to 400, BL (L): 350 to 700 FE ( ) marking symbol Marking 2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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