Product Information

2SC3326-A,LF

2SC3326-A,LF electronic component of Toshiba

Datasheet
Bipolar Transistors - BJT Transistor for Low Freq. Amplification

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.053 ea
Line Total: USD 0.053

1 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

2SC3326-A,LF
Toshiba

1 : USD 0.053
10 : USD 0.052
100 : USD 0.052
1000 : USD 0.052

11640 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

2SC3326-A,LF
Toshiba

3000 : USD 0.0625

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
2SA1162-Y,LF electronic component of Toshiba 2SA1162-Y,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 12000

1SS352,H3F electronic component of Toshiba 1SS352,H3F

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 414000

T2N7002BK,LM electronic component of Toshiba T2N7002BK,LM

N-Channel 60 V 400mA (Ta) 320mW (Ta) Surface Mount SOT-23-3
Stock : 34220

TBC857B,LM electronic component of Toshiba TBC857B,LM

Bipolar Transistors - BJT BJT PNP -0.15A -50V
Stock : 9000

TMBT3906,LM electronic component of Toshiba TMBT3906,LM

Bipolar (BJT) Transistor PNP 50 V 150 mA 250MHz 320 mW Surface Mount SOT-23-3
Stock : 116

DF2S16FS,L3M electronic component of Toshiba DF2S16FS,L3M

ESD Suppressors / TVS Diodes ESD PROTECTION DIODE
Stock : 9970

CES521,L3F electronic component of Toshiba CES521,L3F

Schottky Diodes & Rectifiers SM Sig Schotky Diode 30 VR 0.2A 1 Circuit
Stock : 0

RN1301,LF electronic component of Toshiba RN1301,LF

Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 250Mhz
Stock : 12000

TMBT3904,LM electronic component of Toshiba TMBT3904,LM

Bipolar (BJT) Transistor NPN 50 V 150 mA 300MHz 320 mW Surface Mount SOT-23-3
Stock : 13

2SA1162-GR,LF electronic component of Toshiba 2SA1162-GR,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 1360

Image Description
2N5401 electronic component of Central Semiconductor 2N5401

Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp
Stock : 1

2SD1898T100Q electronic component of ROHM 2SD1898T100Q

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3
Stock : 1

MJE170G electronic component of ON Semiconductor MJE170G

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Stock : 266

FMMT551TA electronic component of Diodes Incorporated FMMT551TA

Bipolar Transistors - BJT PNP Medium Power
Stock : 1227

BC807DS,115 electronic component of Nexperia BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 12001

NSS60601MZ4T3G electronic component of ON Semiconductor NSS60601MZ4T3G

ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Stock : 1

KSC2330YTA electronic component of ON Semiconductor KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 0

CMUT2907A TR electronic component of Central Semiconductor CMUT2907A TR

Central Semiconductor Bipolar Transistors - BJT PNP
Stock : 8901

2SC4117-BL,LF electronic component of Toshiba 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2N4401 electronic component of ON Semiconductor 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 0

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = 2 V, I = 4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 FE Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO JEDEC TO-236MOD Collector current I 300 mA C JEITA SC-59 Base current I 60 mA B TOSHIBA 2-3F1A P (Note 2, 4) 200 C Collector power dissipation mW Weight: 0.012 g (typ.) P (Note 3) 150 C T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Marking Part No.(abbreviation code) h Rank FE C C A Start of commercial production 1982-12 2018 - 2021 1 2021-04-25 Toshiba Electronic Devices & Storage Corporation 2SC3326 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 25 V, I = 0 A 0.1 A EBO EB C h FE DC current gain V = 2 V, I = 4 mA 200 1200 CE C (Note) Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.042 0.1 V CE (sat) C B Base-emitter voltage V V = 2 V, I = 4 mA 0.61 V BE CE C Transition frequency f V = 6 V, I = 4 mA 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 4.8 7 pF ob CB E OUTPUT Turn-on time t 160 on INPUT 4 k 10 V Switching time Storage time t 500 ns stg 0 VCC = 12 V V 1 s BB = 3 V Fall time t 130 f Duty cycle 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 2018 - 2021 2 2021-04-25 Toshiba Electronic Devices & Storage Corporation 50 3 k 1 k

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted