Product Information

2SC3326-A,LF

2SC3326-A,LF electronic component of Toshiba

Datasheet
Bipolar Transistors - BJT Transistor for Low Freq. Amplification

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0751 ea
Line Total: USD 0.0751

1 - Global Stock
Ships to you between
Fri. 06 Oct to Thu. 12 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1

Stock Image

2SC3326-A,LF
Toshiba

1 : USD 0.0751
10 : USD 0.0553
100 : USD 0.053
500 : USD 0.052
1000 : USD 0.052
3000 : USD 0.052

11640 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 3000
Multiples : 3000

Stock Image

2SC3326-A,LF
Toshiba

3000 : USD 0.0625

     
Manufacturer
Toshiba
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Technology
Si
Mounting Style
Smd/Smt
Package / Case
TO - 236 - 3
Transistor Polarity
Npn
Configuration
Single
Maximum DC Collector Current
300 mA
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
25 V
Collector-Emitter Saturation Voltage
42 mV
Pd - Power Dissipation
150 mW
Gain Bandwidth Product fT
30 Mhz
Maximum Operating Temperature
+ 125 C
Series
2Sc3326
Packaging
Reel
Brand
Toshiba
Factory Pack Quantity :
3000
Dc Current Gain Hfe Max
1200
Cnhts
8541290000
Dc Collector/Base Gain Hfe Min
200
Hts Code
8541290095
Mxhts
85412999
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8541290000
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2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = 2 V, I = 4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 FE Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO JEDEC TO-236MOD Collector current I 300 mA C JEITA SC-59 Base current I 60 mA B TOSHIBA 2-3F1A P (Note 2, 4) 200 C Collector power dissipation mW Weight: 0.012 g (typ.) P (Note 3) 150 C T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Marking Part No.(abbreviation code) h Rank FE C C A Start of commercial production 1982-12 2018 - 2021 1 2021-04-25 Toshiba Electronic Devices & Storage Corporation 2SC3326 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 25 V, I = 0 A 0.1 A EBO EB C h FE DC current gain V = 2 V, I = 4 mA 200 1200 CE C (Note) Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.042 0.1 V CE (sat) C B Base-emitter voltage V V = 2 V, I = 4 mA 0.61 V BE CE C Transition frequency f V = 6 V, I = 4 mA 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 4.8 7 pF ob CB E OUTPUT Turn-on time t 160 on INPUT 4 k 10 V Switching time Storage time t 500 ns stg 0 VCC = 12 V V 1 s BB = 3 V Fall time t 130 f Duty cycle 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 2018 - 2021 2 2021-04-25 Toshiba Electronic Devices & Storage Corporation 50 3 k 1 k

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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