X-On Electronics has gained recognition as a prominent supplier of 2SC3326-A,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC3326-A,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC3326-A,LF Toshiba

2SC3326-A,LF electronic component of Toshiba
2SC3326-A,LF Toshiba
2SC3326-A,LF Bipolar Transistors - BJT
2SC3326-A,LF  Semiconductors

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See Product Specifications
Part No. 2SC3326-A,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Datasheet: 2SC3326-A,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1748 ea
Line Total: USD 0.87 
Availability - 72
Ship by Fri. 06 Jun to Wed. 11 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
72
Ship by Fri. 06 Jun to Wed. 11 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1748
50 : USD 0.138
150 : USD 0.1194
500 : USD 0.0713
3000 : USD 0.0637
6000 : USD 0.0599

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC3326-A,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC3326-A,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: V = 25 V EBO High reverse h : Reverse h = 150 (typ.) (V = 2 V, I = 4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON B High DC current gain: h = 200 to 1200 FE Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO JEDEC TO-236MOD Collector current I 300 mA C JEITA SC-59 Base current I 60 mA B TOSHIBA 2-3F1A P (Note 2, 4) 200 C Collector power dissipation mW Weight: 0.012 g (typ.) P (Note 3) 150 C T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Marking Part No.(abbreviation code) h Rank FE C C A Start of commercial production 1982-12 2018 - 2021 1 2021-04-25 Toshiba Electronic Devices & Storage Corporation 2SC3326 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 25 V, I = 0 A 0.1 A EBO EB C h FE DC current gain V = 2 V, I = 4 mA 200 1200 CE C (Note) Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 0.042 0.1 V CE (sat) C B Base-emitter voltage V V = 2 V, I = 4 mA 0.61 V BE CE C Transition frequency f V = 6 V, I = 4 mA 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 4.8 7 pF ob CB E OUTPUT Turn-on time t 160 on INPUT 4 k 10 V Switching time Storage time t 500 ns stg 0 VCC = 12 V V 1 s BB = 3 V Fall time t 130 f Duty cycle 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 2018 - 2021 2 2021-04-25 Toshiba Electronic Devices & Storage Corporation 50 3 k 1 k

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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