X-On Electronics has gained recognition as a prominent supplier of BC807DS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807DS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807DS,115 Nexperia

Hot BC807DS,115 electronic component of Nexperia
BC807DS,115 Nexperia
BC807DS,115 Bipolar Transistors - BJT
BC807DS,115  Semiconductors

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Part No. BC807DS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Datasheet: BC807DS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4386: USD 0.0593 ea
Line Total: USD 260.09 
Availability - 11640
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ: 4386  Multiples: 1
Pack Size: 1
Availability Price Quantity
360840
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0587

11640
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 4386
Multiples : 1
4386 : USD 0.0593
5989 : USD 0.0434
6173 : USD 0.0421

29100
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.0559
12000 : USD 0.0541
15000 : USD 0.0517
45000 : USD 0.0501

59468
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4125
10 : USD 0.2125
100 : USD 0.1296
500 : USD 0.099
1000 : USD 0.0847
3000 : USD 0.0649
6000 : USD 0.0605
9000 : USD 0.0561
24000 : USD 0.0539

2129
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.532
10 : USD 0.3136
50 : USD 0.2002
100 : USD 0.1666
203 : USD 0.0938

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
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We are delighted to provide the BC807DS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807DS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807DS PNP/PNP general purpose double transistors 3 May 2019 Product data sheet 1. General description PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN/NPN complement: BC817DS NPN/PNP complement: BC817DPN 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -45 V CEO voltage I collector current - - -500 mA C I peak collector current single pulse t 1 ms - - -1 A CM p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 C2 C1 TR2 3 C2 collector TR2 TR1 1 2 3 4 E2 emitter TR2 SC-74 TSOP6 (SOT457) E1 B2 C2 5 B2 base TR2 sym018 6 C1 collector TR1Nexperia BC807DS PNP/PNP general purpose double transistors 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC807DS SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code BC807DS N2 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -45 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -500 mA C I peak collector current single pulse t 1 ms - -1 A CM p I peak base current - -200 mA BM P total power dissipation T 25 C 1 - 370 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg Per device P total power dissipation T 25 C 1 - 600 mW tot amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper tin plated mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air 1 - - 208 K/W th(j-a) junction to ambient 2 1 Device mounted on an FR4 PCB single-sided copper tin-plated mounting pad for collector 1 cm . BC807DS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 3 May 2019 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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