Product Information

ASM6115

ASM6115 electronic component of Sine Microelectronics

Datasheet
60V 35A 25mO@10V,18A 52.1W P Channel TO-252-2 MOSFETs ROHS

Manufacturer: Sine Microelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5435 ea
Line Total: USD 0.54

2968 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2066 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

ASM6115
Sine Microelectronics

1 : USD 0.5113
10 : USD 0.4053
30 : USD 0.3617
100 : USD 0.3056
500 : USD 0.2807
1000 : USD 0.266

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The ASM6115 is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Sine Microelectronics. This MOSFET features a drain-source voltage (VDS) rating of up to 60 volts (60V), a current rating of up to 35 amps (35A), a maximum on-state resistance of 25 milliohms (25mO@10V), and a maximum power dissipation of 52.1 watts (52.1W). The MOSFET comes in the TO-252-2 packaging style and is compliant with the Restriction of Hazardous Substances (RoHS) Directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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