Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDJ1028N N-Channel 2.5 Vgs Specied PowerTrench MOSFET
August 2006
FDJ1028N
N-Channel 2.5 Vgs Specied PowerTrench MOSFET
Features Applications
3.2 A, 20 V. R = 90 m @ V = 4.5 V Battery management
DS(ON) GS
R = 130 m @ V = 2.5 V
DS(ON) GS
General Description
Low gate charge
High performance trench technology for extremely low
This dual N-Channel 2.5V specied MOSFET uses Fairchilds
R
DS(ON)
advanced low voltage PowerTrench process. Packaged in FLMP
FLMP SC75 package: Enhanced thermal performance in
SC75, the R and thermal properties of the device are
DS(ON)
industry-standard package size
optimized for battery power management applications.
Bottom Drain Contact
S2
S1
4
3
G1
5 2
G2 1
6
S2
S1
Bottom Drain Contact
Absolute Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter Ratings Units
V Drain-Source Voltage 20 V
DSS
V Gate-Source Voltage 12 V
GSS
I Drain Current Continuous (Note 1a) 3.2 A
D
Pulsed 12
P Power Dissipation for single Operation (Note 1a) 1.5 W
D
T , T Operating and Storage Junction Temperature Range 55 to +150 C
J STG
Thermal Characteristics
R Thermal Resistance, Junction-to-Ambient (Note 1a) 80 C/W
JA
R Thermal Resistance, Junction-to-Case 5
JC
Packge Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.F FDJ1028N 7" 8mm 3000 units
2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDJ1028N Rev. B3 (W)