NTNUS3171PZ MOSFET Single P-Channel, Small Signal, SOT-1123, 1.0 x 0.6 mm -20 V, -200 mA NTNUS3171PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 1000 C/W JA JunctiontoAmbient t = 5 s (Note 3) R 600 JA 2 3. Surfacemounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 5.0 V T = 25C 50 DSS GS DS J V = 0 V, V = 5.0 V T = 85C 100 GS DS J nA V = 0 V, V = 16 V T = 25C 200 GS DS J GatetoSource Leakage Current I V = 0 V, V = 5.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 0.7 1.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 4.5 V, I = 100 mA 2.0 3.5 DS(ON) GS D V = 2.5 V, I = 50 mA 2.6 4.0 GS D V = 1.8 V, I = 20 mA 3.4 5.5 GS D V = 1.5 V, I = 10 mA 4.0 7.0 GS D V = 1.2 V, I = 1.0 mA 6.0 GS D Forward Transconductance g V = 5.0 V, I = 125 mA 0.26 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 200 mA 0.5 1.4 V SD GS S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 13 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 3.4 pF OSS V = 15 V DS Reverse Transfer Capacitance C 1.6 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 30 d(ON) Rise Time t 56 r V = 4.5 V, V = 15 V, GS DD ns I = 200 mA, R = 2.0 D G TurnOff Delay Time t 196 d(OFF) Fall Time t 145 f 4. Switching characteristics are independent of operating junction temperatures