ZXMN6A07ZTA

ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V R ( ) I (A) (BR)DSS DS(on) D 0.250 V = 10V 2.5 GS 60 0.350 V = 4.5V 2.1 GS Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S SOT89 package D Applications D DC-DC converters G Power management functions Relay and solenoid driving Top view Motor control Ordering information Device Reel size Tape width Quantity per (inches) (mm) reel ZXMN6A07ZTA 7 12 1,000 Device marking 7N6 Issue 8 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXMN6A07Z Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GS (b) I 2.5 A Continuous drain current V = 10V T =25C D GS amb (b) 2.0 V = 10V T =70C GS amb (a) 1.9 V = 10V T =25C GS amb (c) I 6.8 A Pulsed drain current DM (b) I 3.3 A Continuous source current (body diode) S (c) I 6.8 A Pulsed source current (body diode) SM (a) P 1.5 W Power dissipation at T =25C D amb Linear derating factor 12 mW/C (b) P 2.6 W Power dissipation at T =25C D amb Linear derating factor 21 mW/C Thermal resistance Parameter Symbol Limit Unit Junction to ambient R 83.3 C/W JA Junction to ambient R 47.4 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 8 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007