ZXMN6A07ZTA Diodes Incorporated

ZXMN6A07ZTA electronic component of Diodes Incorporated
ZXMN6A07ZTA Diodes Incorporated
ZXMN6A07ZTA MOSFETs
ZXMN6A07ZTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXMN6A07ZTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN6A07ZTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ZXMN6A07ZTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R
Datasheet: ZXMN6A07ZTA Datasheet (PDF)
Price (USD)
1: USD 0.9 ea
Line Total: USD 0.9 
Availability : 8587
  
Ship by Mon. 04 Aug to Wed. 06 Aug
QtyUnit Price
1$ 0.9
10$ 0.6463
100$ 0.3883
500$ 0.3311
1000$ 0.275
2000$ 0.2409
5000$ 0.2398

Availability 703
Ship by Wed. 06 Aug to Tue. 12 Aug
MOQ : 615
Multiples : 1
QtyUnit Price
615$ 0.423
1025$ 0.2539


Availability 8587
Ship by Mon. 04 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9
10$ 0.6463
100$ 0.3883
500$ 0.3311
1000$ 0.275
2000$ 0.2409
5000$ 0.2398


Availability 1025
Ship by Mon. 04 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.952
10$ 0.7014
44$ 0.4452
50$ 0.4438
120$ 0.42


Availability 1738
Ship by Wed. 13 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.824
10$ 0.6382
30$ 0.5604
100$ 0.311
500$ 0.2809
1000$ 0.264

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN6A07ZTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN6A07ZTA and other electronic components in the MOSFETs category and beyond.

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ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V R ( ) I (A) (BR)DSS DS(on) D 0.250 V = 10V 2.5 GS 60 0.350 V = 4.5V 2.1 GS Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S SOT89 package D Applications D DC-DC converters G Power management functions Relay and solenoid driving Top view Motor control Ordering information Device Reel size Tape width Quantity per (inches) (mm) reel ZXMN6A07ZTA 7 12 1,000 Device marking 7N6 Issue 8 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXMN6A07Z Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GS (b) I 2.5 A Continuous drain current V = 10V T =25C D GS amb (b) 2.0 V = 10V T =70C GS amb (a) 1.9 V = 10V T =25C GS amb (c) I 6.8 A Pulsed drain current DM (b) I 3.3 A Continuous source current (body diode) S (c) I 6.8 A Pulsed source current (body diode) SM (a) P 1.5 W Power dissipation at T =25C D amb Linear derating factor 12 mW/C (b) P 2.6 W Power dissipation at T =25C D amb Linear derating factor 21 mW/C Thermal resistance Parameter Symbol Limit Unit Junction to ambient R 83.3 C/W JA Junction to ambient R 47.4 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 8 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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