Product Information

ZXMN6A07ZTA

ZXMN6A07ZTA electronic component of Diodes Incorporated

Datasheet
Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

207: USD 0.1862 ea
Line Total: USD 38.5434

200 - Global Stock
Ships to you between
Fri. 06 Oct to Thu. 12 Oct
MOQ: 207  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
200 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 207
Multiples : 1000

Stock Image

ZXMN6A07ZTA
Diodes Incorporated

207 : USD 0.1862
1001 : USD 0.1693
2000 : USD 0.1575
4000 : USD 0.1483
8000 : USD 0.1444

12227 - Global Stock


Ships to you between Thu. 12 Oct to Mon. 16 Oct

MOQ : 1
Multiples : 1

Stock Image

ZXMN6A07ZTA
Diodes Incorporated

1 : USD 0.783
10 : USD 0.6858
100 : USD 0.4338
500 : USD 0.3725
1000 : USD 0.315
2000 : USD 0.2736
5000 : USD 0.2616

1867 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 1
Multiples : 1

Stock Image

ZXMN6A07ZTA
Diodes Incorporated

1 : USD 1.2545
5 : USD 0.5421
25 : USD 0.4875
42 : USD 0.3549
116 : USD 0.3354

1882 - Global Stock


Ships to you between
Fri. 13 Oct to Wed. 18 Oct

MOQ : 1
Multiples : 1

Stock Image

ZXMN6A07ZTA
Diodes Incorporated

1 : USD 0.6831
10 : USD 0.5585
30 : USD 0.4961
100 : USD 0.436
500 : USD 0.3996
1000 : USD 0.3801

     
Manufacturer
Diodes Incorporated
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
2.5 A
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
250 mOhms
Transistor Polarity
N - Channel
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
2.6 W
Mounting Style
Smd/Smt
Package / Case
SOT - 89 - 3
Packaging
Cut Tape
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
3.2 nC
Channel Mode
Enhancement
Configuration
Single
Height
1.6 mm
Length
4.6 mm
Series
Zxmn6a07
Transistor Type
1 N - Channel
Type
Mosfet
Width
2.6 mm
Brand
Diodes Incorporated
Forward Transconductance - Min
2.3 S
Cnhts
8541210000
Fall Time
2 ns
Hts Code
8541290095
Mxhts
85412999
Product Type
Mosfet
Rise Time
1.4 ns
Factory Pack Quantity :
1000
Subcategory
Mosfets
Taric
8541290000
Typical Turn-Off Delay Time
4.9 ns
Typical Turn-On Delay Time
1.8 ns
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ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V R ( ) I (A) (BR)DSS DS(on) D 0.250 V = 10V 2.5 GS 60 0.350 V = 4.5V 2.1 GS Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S SOT89 package D Applications D DC-DC converters G Power management functions Relay and solenoid driving Top view Motor control Ordering information Device Reel size Tape width Quantity per (inches) (mm) reel ZXMN6A07ZTA 7 12 1,000 Device marking 7N6 Issue 8 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXMN6A07Z Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GS (b) I 2.5 A Continuous drain current V = 10V T =25C D GS amb (b) 2.0 V = 10V T =70C GS amb (a) 1.9 V = 10V T =25C GS amb (c) I 6.8 A Pulsed drain current DM (b) I 3.3 A Continuous source current (body diode) S (c) I 6.8 A Pulsed source current (body diode) SM (a) P 1.5 W Power dissipation at T =25C D amb Linear derating factor 12 mW/C (b) P 2.6 W Power dissipation at T =25C D amb Linear derating factor 21 mW/C Thermal resistance Parameter Symbol Limit Unit Junction to ambient R 83.3 C/W JA Junction to ambient R 47.4 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 8 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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