CMLDM3737 SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 MOSFET consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r and low threshold voltage. DS(ON) MARKING CODE: 7C3 FEATURES: ESD Protection up to 2kV SOT-563 CASE 350mW Power Dissipation Very Low r DS(ON) APPLICATIONS: Low Threshold Voltage Load Switch / Level Shifting Logic Level Compatible Battery Charging Small, SOT-563 Surface Mount Package Boost Switch Electro-luminescent Backlighting Complementary Dual P-Channel Device: CMLDM5757 MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 540 mA D Maximum Pulsed Drain Current (tp=10s) I 1.5 A DM Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 1) 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =4.5V, V=0 5.0 A GSSF GSSR GS DS I V =16V, V=0 1.0 A DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.45 1.0 V GS(th) DS GS D V V =0, I=350mA 1.2 V SD GS S r V =4.5V, I=540mA 0.55 DS(ON) GS D r V =2.5V, I=500mA 0.7 DS(ON) GS D r V =1.8V, I=350mA 0.9 DS(ON) GS D C V =16V, V =0, f=1.0MHz 20 pF rss DS GS C V =16V, V =0, f=1.0MHz 150 pF iss DS GS C V =16V, V =0, f=1.0MHz 25 pF oss DS GS 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R3 (8-June 2015)CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A SYMBOL TEST CONDITIONS TYP UNITS Q V =10V, V =4.5V, I =500mA g(tot) DS GS D 1.58 nC Q V =10V, V =4.5V, I =500mA gs DS GS D 0.17 nC Q V =10V, V =4.5V, I =500mA gd DS GS D 0.24 nC t V =10V, V =4.5V, I =540mA, R =10 10 ns on DD GS D G t V =10V, V =4.5V, I =540mA, R=10 25 ns off DD GS D G SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 7C3 R3 (8-June 2015) www.centralsemi.com