Product Information

CMUT2907A TR

Product Image X-ON

Datasheet
Central Semiconductor Bipolar Transistors - BJT PNP

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6138 ea
Line Total: USD 0.6138

1 - Global Stock
Ships to you between
Wed. 21 Jun to Fri. 23 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Wed. 21 Jun to Fri. 23 Jun

MOQ : 1
Multiples : 1

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CMUT2907A TR
Central Semiconductor

1 : USD 0.5181
10 : USD 0.422
100 : USD 0.267
500 : USD 0.2025
1000 : USD 0.1586
3000 : USD 0.1337
9000 : USD 0.1263
24000 : USD 0.1201
45000 : USD 0.1163

     
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Mounting Style
Smd/Smt
Package / Case
SOT - 523 - 3
Transistor Polarity
Pnp
Configuration
Single
Maximum DC Collector Current
600 mA
Collector- Emitter Voltage VCEO Max
60 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
2.6 V
Pd - Power Dissipation
250 mW
Gain Bandwidth Product fT
200 Mhz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Series
Cmut2907
Packaging
Reel
Dc Current Gain Hfe Max
300
Brand
Central Semiconductor
Dc Collector/Base Gain Hfe Min
50
Factory Pack Quantity :
3000
Continuous Collector Current
600 mA
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8541290000
Tradename
Ultramini
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CMUT2907A www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=125C 10 A CBO CB A I V =30V, V=0.5V 50 nA CEV CE BE BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =500mA, I=50mA 1.6 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =500mA, I=50mA 2.6 V BE(SAT) C B h V =10V, I=0.1mA 75 FE CE C h V =10V, I=1.0mA 100 FE CE C h V =10V, I=10mA 100 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 50 FE CE C R3 (9-February 2010)CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib BE C t V =30V, V =0.5V, I =150mA, I=15mA 45 ns on CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I=15mA 100 ns off CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 80 ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 30 ns f CC C B1 B2 SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter (Bottom View) 3) Collector MARKING CODE: FC2 R3 (9-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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