X-On Electronics has gained recognition as a prominent supplier of CMUT2907A TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMUT2907A TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMUT2907A TR Central Semiconductor

CMUT2907A TR electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.CMUT2907A TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT PNP
Datasheet: CMUT2907A TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.435 ea
Line Total: USD 0.44

Availability - 8633
Ship by Wed. 31 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8521
Ship by Wed. 31 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2622
10 : USD 0.2105
100 : USD 0.1552
1000 : USD 0.1288
3000 : USD 0.1162
9000 : USD 0.1081
24000 : USD 0.1081
45000 : USD 0.1035
99000 : USD 0.1024

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
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We are delighted to provide the CMUT2907A TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMUT2907A TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMUT2907A www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=125C 10 A CBO CB A I V =30V, V=0.5V 50 nA CEV CE BE BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =500mA, I=50mA 1.6 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =500mA, I=50mA 2.6 V BE(SAT) C B h V =10V, I=0.1mA 75 FE CE C h V =10V, I=1.0mA 100 FE CE C h V =10V, I=10mA 100 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 50 FE CE C R3 (9-February 2010)CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib BE C t V =30V, V =0.5V, I =150mA, I=15mA 45 ns on CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I=15mA 100 ns off CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 80 ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 30 ns f CC C B1 B2 SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter (Bottom View) 3) Collector MARKING CODE: FC2 R3 (9-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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