Product Information

2N2223A

2N2223A electronic component of Central Semiconductor

Datasheet
Bipolar Transistors - BJT . .

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

2N2223A
Central Semiconductor

1 : USD 21.2746
10 : USD 21.0686
25 : USD 18.9232
100 : USD 17.6672
300 : USD 16.2947
500 : USD 14.9456
1000 : USD 14.9456
2500 : USD 14.2477
N/A

Obsolete
     
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Technology
Si
Mounting Style
Through Hole
Package / Case
TO - 78 - 6
Transistor Polarity
Npn
Configuration
Single
Collector- Emitter Voltage VCEO Max
60 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
0.9 V
Pd - Power Dissipation
600 mW
Gain Bandwidth Product fT
50 Mhz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
Series
2N2223
Packaging
Tray
Brand
Central Semiconductor
Factory Pack Quantity :
100
Dc Current Gain Hfe Max
200
Continuous Collector Current
500 mA
Cnhts
8541290000
Dc Collector/Base Gain Hfe Min
15
Hts Code
8541290095
Mxhts
85412999
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8541290000
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2N2223 2N2223A www.centralsemi.com SILICON DESCRIPTION: DUAL NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 80 V CER Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (One Die) P 500 mW D Power Dissipation (Both Dice) P 600 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=80V 10 nA CBO CB I V =80V, T=150C 15 A CBO CB A I V=5.0V 10 nA EBO EB BV I=100A 100 V CBO C BV I =100mA, R=10 80 V CER C EB BV I=30mA 60 V CEO C BV I=100A 7.0 V EBO E V I =50mA, I=5.0mA 1.2 V CE(SAT) C B V I =50mA, I=5.0mA 0.9 V BE(SAT) C B h V =5.0V, I=10A 15 FE CE C h V =5.0V, I=100A 25 150 FE CE C h V =5.0V, I=10mA 50 200 FE CE C f V =10V, I =50mA, f=20MHz 50 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB E C V =0.5V, I =0, f=1.0MHz 85 pF ib BE C h V =5.0V, I =1.0mA, f=1.0kHz 20 30 ib CB C -4 h V =5.0V, I =1.0mA, f=1.0kHz 3.0 x10 rb CB C h V =5.0V, I =1.0mA, f=1.0kHz 40 200 fe CE C h V =5.0V, I =1.0mA, f=1.0kHz 0.5 S ob CB C MATCHING CHARACTERISTICS: 2N2223 2N2223A UNITS SYMBOL TEST CONDITIONS MIN MAX MIN MAX h /h (Note 1) V =5.0V, I=100A 0.8 1.0 0.9 1.0 FE1 FE2 CE C V -V V =5.0V, I=100A - 15 - 5.0 mV BE1 BE2 CE C Notes: (1) The lowest reading is taken as h . FE1 R0 (22-January 2014)2N2223 2N2223A SILICON DUAL NPN TRANSISTORS TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R0 (22-January 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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