2N2223 2N2223A www.centralsemi.com SILICON DESCRIPTION: DUAL NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 80 V CER Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (One Die) P 500 mW D Power Dissipation (Both Dice) P 600 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=80V 10 nA CBO CB I V =80V, T=150C 15 A CBO CB A I V=5.0V 10 nA EBO EB BV I=100A 100 V CBO C BV I =100mA, R=10 80 V CER C EB BV I=30mA 60 V CEO C BV I=100A 7.0 V EBO E V I =50mA, I=5.0mA 1.2 V CE(SAT) C B V I =50mA, I=5.0mA 0.9 V BE(SAT) C B h V =5.0V, I=10A 15 FE CE C h V =5.0V, I=100A 25 150 FE CE C h V =5.0V, I=10mA 50 200 FE CE C f V =10V, I =50mA, f=20MHz 50 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB E C V =0.5V, I =0, f=1.0MHz 85 pF ib BE C h V =5.0V, I =1.0mA, f=1.0kHz 20 30 ib CB C -4 h V =5.0V, I =1.0mA, f=1.0kHz 3.0 x10 rb CB C h V =5.0V, I =1.0mA, f=1.0kHz 40 200 fe CE C h V =5.0V, I =1.0mA, f=1.0kHz 0.5 S ob CB C MATCHING CHARACTERISTICS: 2N2223 2N2223A UNITS SYMBOL TEST CONDITIONS MIN MAX MIN MAX h /h (Note 1) V =5.0V, I=100A 0.8 1.0 0.9 1.0 FE1 FE2 CE C V -V V =5.0V, I=100A - 15 - 5.0 mV BE1 BE2 CE C Notes: (1) The lowest reading is taken as h . FE1 R0 (22-January 2014)2N2223 2N2223A SILICON DUAL NPN TRANSISTORS TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R0 (22-January 2014) www.centralsemi.com