D3V3L2B3LP10
2 CHANNEL HIGH SURGE BIDIRECTIONAL TVS DIODE
Product Summary Features
V I C
BR min pp max in typ Provides ESD Protection per IEC 61000-4-2 Standard:
3.8V 5A 10pF
Air 25kV, Contact 23kV
2 Channel of ESD Protection
Low Channel Input Capacitance
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
This new generation TVS is designed to protect sensitive electronics
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
Mechanical Data
such as cellular phones, digital cameras and MP3 players.
Case: X2-DFN1010-3
Case Material: Molded Plastic, Green Molding Compound;
Applications
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Cellular Handsets
Terminals: NiPdAu over Copper Leadframe; Solderable per
Portable Electronics
e4
MIL-STD-202, Method 208
Computers and Peripheral
Weight: 0.001 grams (Approximate)
X2-DFN1010-3
Ch2
2
2
3
3
GND
1
Ch1
1
Device Schematic
Top View
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D3V3L2B3LP10-7 Standard SM 7 8 5,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D3V3L2B3LP10
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P 35 W 8/20s, per Figure 1
PP
Peak Pulse Current 5 A 8/20s, per Figure 1
IPP
ESD Protection Contact Discharge 23 kV IEC 61000-4-2 Standard
V
ESD_Contact
ESD Protection Air Discharge 25 kV IEC 61000-4-2 Standard
V
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) 250 mW
P
D
Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W
JA
Operating and Storage Temperature Range -65 to +150 C
TJ, TSTG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 3.3 V
RWM
Channel Leakage Current (Note 6) 10 200 nA
IRM VRWM = 3.3V
4.5 5.4
I = 1A, t = 8/20S
PP p
Clamping Voltage, Positive Transients V V
CL
5.8 7.0
I = 5A, t = 8/20S
PP p
Breakdown Voltage 3.8 6.5 V
V I = 1mA
BR R
Differential Resistance 0.3
R I = 1A, t = 8/20S
DIF R p
Channel Input Capacitance C 10 13 pF V = 0V, f = 1MHz
IN R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at