BAS116,235

BAS116 Low-leakage diode 5 August 2020 Product data sheet 1. General description Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. 2. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. AEC-Q101 qualified 3. Applications Low leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current t 300 s 0.02 T = 25 C - - 215 mA F p amb V repetitive peak reverse T = 25 C - - 85 V RRM j voltage V forward voltage I = 50 mA t 300 s 0.02 - - 1.1 V F F p T = 25 C j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - 0.8 3 s rr F R L I = 1 mA T = 25 C R(meas) j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 K 1 A anode 2 n.c. not connected A n.c. 3 K cathode 006aaa764 1 2 SOT23Nexperia BAS116 Low-leakage diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 BAS116 JV% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 85 V RRM j voltage V reverse voltage - 75 V R I forward current t 300 s 0.02 T = 25 C - 215 mA F p amb I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) I repetitive peak forward - 500 mA FRM current P total power dissipation T 25 C 1 - 250 mW tot amb Per device, one diode loaded T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS116 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 5 August 2020 2 / 10