BAS116LYL Nexperia

BAS116L Low-leakage diode 4 May 2016 Product data sheet 1. General description Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Switching time typical: t = 0.8 s rr Low leakage current typical: I = 3 pA R Repetitive peak reverse voltage: V 85 V RRM Low capacitance typical: C = 2 pF d Leadless ultra small SMD plastic package Low package height of 0.48 mm AEC-Q101 qualified 3. Applications Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse T = 25 C - - 85 V RRM j voltage I forward current T = 25 C 1 - - 325 mA F amb V reverse voltage T = 25 C - - 75 V R j V forward voltage I = 150 mA T = 25 C - - 1.25 V F F j I reverse current V = 75 V T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA I = 1 mA - 0.8 3 s rr F R R(meas) R = 100 T = 25 C L amb 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.Nexperia BAS116L Low-leakage diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 1 2 2 A anode 006aab040 Transparent top view DFN1006-2 (SOD882) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116L DFN1006-2 DFN1006-2: leadless ultra small plastic package 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code BAS116L J6 BAS116L All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 May 2016 2 / 12