Product Information

NTE6404

NTE6404 electronic component of NTE

Datasheet
SUS; Ifmax:1A; TO98; 7÷9V

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 16.627 ea
Line Total: USD 33.25

58 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
58 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1
5 : USD 13.7625
25 : USD 10.9125
50 : USD 10.75
100 : USD 10.575
250 : USD 9.7
500 : USD 9.5625
1000 : USD 9.4125
2500 : USD 8.95

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
LoadingGif

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NTE6404 Silicon Unilateral Switch (SUS) Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an ideal four layer diode. The device is designed to switch at 8 volts with a 0.02%/C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain trig- gering at lower values and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance. Applications: SCR Triggers Frequency Dividers Ring Counters Cross Point Switching OverVoltage Sensors Absolute Maximum Ratings: Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Peak Recurrent Forward Current (1% duty cycle, 10 s pulse width, T = +100C) . . . . . . . . . . . 1A A Peak NonRecurrent Forward Current (10 s pulse width, T = +25C) 5A. . . . . . . . . . . . . . . . . . . . A Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Note 1. Derate linearly to zero at 125C Note 2. This rating applicable only in OFF state. Maximum gate current in conducting state limited by maximum power rating. Electrical Characteristics: (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Forward Switching Voltage V 7 9 V S Forward Switching Current I 200 A S Holding Current I 0.75 mA HElectrical Characteristics (Contd): (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics (Contd) Reverse Current I V = 30V, T = +25C 0.1 A R R A V = 30V, T = +100C 10 A R A Forward Current (OffState) I V = 5V, T = +25C 0.1 A B F A V = 5V, T = +25C 10 A F A Forward Voltage Drop (OnState) V I = 175mA 1.5 V F F Temperature Coefficient of Switching Voltage T T = 55 to +100C 0.02 %/C C A Dymanic Characteristics TurnOn Time t 1.0 s on TurnOff Time t 25 s off Capacitance C f = 1MHz 2.5 pF .140 (3.55) Max .190 (4.82) Min .265 (6.74) Max .500 (12.7) Min A G K .100 (2.54) .200 (5.08) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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