Product Information

NTE6410

NTE6410 electronic component of NTE

Datasheet
Transistor: UJT; unipolar; 300mW; TO92

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 7.775 ea
Line Total: USD 38.88

9 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 5
Multiples : 1
5 : USD 7.775
50 : USD 6.1875
100 : USD 6
250 : USD 5.825
500 : USD 5.5
1000 : USD 5.3625
2500 : USD 5.275
5000 : USD 5.0875

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Valley Current
Power Dissipation
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NTE6410 Unijunction Transistor (UJT) Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (T = +25C unless other specified) A RMS Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/C RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E PeakPulse Emitter Current (Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A E Emitter Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V B2E Interbase Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V B2B1 Operating Junction Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Note 1. Duty cycle 1%, PRR = 10 PPS Note 2. Based upon power dissipation at T = +25C A Electrical Characteristics: (T = +25C unless other specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 3 0.70 0.85 B2B1 Interbase Resistance R 4.0 6.0 9.1 k BB Interbase Resistance Temperature Coefficient R 0.1 0.9 %/C BB Emitter Saturation Voltage V V = 10V, I = 50mA, Note 4 2.5 V BE1(sat) B2B1 E Modulated Interbase Current I V = 10V, I = 50mA 15 mA B2(Mod) B2B1 E Emitter Reverse Current I V = 30V, I = 0 0.005 1.0 A EB2O B2E B1 PeakPoint Emitter Current I V = 25V 1.0 5.0 A P B2B1 ValleyPoint Current I V = 20V, R = 100 , Note 4 4.0 7.0 mA V B2B1 B2 BaseOne Peak Pulse Voltage V 5.0 8.0 V OB1 Note 3. Intrinsic standoff ratio, is defined in terms of peakpoint voltage, V , by means of the equa- P tion: V = V V , where V is approximately 0.49 volts at +25C I = 10 A and de- P B2B1 F F F creases with temperature at approximately 2.5mV/C. Components R , C , and the UJT 1 1 form a relaxation oscillator, the remaining circuitry serves as a peakvoltage detector. The forward drop of Diode D compensates for V . To use, the call button is pushed, and R 1 F 3 is adjusted to make the current meter, M , read full scale. When the call button is released, 1 the value of is read directly from the meter, if full scale on the meter reads 1.0. Note 4. Use pulse techniques: PW 300 s, duty cycle 2.0% to avoid internal heating, which may result in erroneous readings..135 (3.45) Min .210 (5.33) Seating Plane Max .021 (.445) Dia Max .500 (12.7) Min B E B2 .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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