Product Information

PMDXB600UNE

PMDXB600UNE electronic component of NXP

Datasheet
MOSFET, DUAL N-CH, 20V, 0.6A, DFN1010B-6
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.9261 ea
Line Total: USD 4.63

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.2436

0 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.8204
10 : USD 0.6922
100 : USD 0.5192
500 : USD 0.3807
1000 : USD 0.2942

0 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1
5 : USD 0.9563
25 : USD 0.4184
100 : USD 0.2134
250 : USD 0.1957
500 : USD 0.1685
1000 : USD 0.1315

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 470 m DSon 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product DFN1010B- 6NXP Semiconductors PMDXB600UNE 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB600UNE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB600UNE 00 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB600UNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 1 July 2015 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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