X-On Electronics has gained recognition as a prominent supplier of PMDXB600UNEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB600UNEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB600UNEZ Nexperia

Name: PMDXB600UNEZ
Brand: Nexperia
SKU: PMDXB600UNEZ_Nexperia
Availability: InStock
Rating: 5 (11 reviews)

PMDXB600UNEZ electronic component of Nexperia

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See Product Specifications

Part No.	PMDXB600UNEZ
Manufacturer:	Nexperia
Category:	MOSFETs
Description:	NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET
Datasheet:	PMDXB600UNEZ Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3705 ea
Line Total: USD 0.37

Availability - 39150
Ship by Fri. 09 May to Tue. 13 May

MOQ: 1 Multiples: 1
Pack Size: 1

PMDXB600UNEZ More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

6742

Ship by Tue. 13 May to Mon. 19 May

MOQ : 4566
Multiples : 1

4566 : USD 0.0588
4651 : USD 0.0577
6000 : USD 0.0566

39150

Ship by Fri. 09 May to Tue. 13 May

MOQ : 1
Multiples : 1

1 : USD 0.3705
10 : USD 0.2569
100 : USD 0.1004
500 : USD 0.0886
1000 : USD 0.0625
2500 : USD 0.0591
5000 : USD 0.058
10000 : USD 0.0477
25000 : USD 0.0466

Specifications

Manufacturer

Nexperia Nexperia

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

600 mA , 600 mA 600 mA , 600 mA

Vds - Drain-Source Breakdown Voltage

20 v , 20 V 20 v , 20 V

Rds On - Drain-Source Resistance

3 Ohms , 3 Ohms 3 Ohms , 3 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

450 mV , 450 mV 450 mV , 450 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

380 mW 380 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

DFN1010B - 6 DFN1010B - 6

Packaging

Reel Reel

Technology

Si Si

Number of Channels

2 Channel 2 Channel

Vgs - Gate-Source Voltage

+/- 8 v , +/- 8 V +/- 8 v , +/- 8 V

Qg - Gate Charge

0.4 nC 0.4 nC

Channel Mode

Enhancement Enhancement

Configuration

Dual Dual

Brand

Nexperia Nexperia

Forward Transconductance - Min

1 S 1 S

Fall Time

51 ns 51 ns

Rise Time

9.2 ns 9.2 ns

Factory Pack Quantity :

5000 5000

Typical Turn-Off Delay Time

19 ns 19 ns

Typical Turn-On Delay Time

5.6 ns 5.6 ns

Transistor Type

2 N - Channel 2 N - Channel

Cnhts

8541210000 8541210000

Hts Code

8541210075 8541210075

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

PMDXB600UNEZ Alternative Parts

We are delighted to provide the PMDXB600UNEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB600UNEZ and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The PMDXB600UNEZ MOSFET is a 20 V, dual N-channel Trench MOSFET manufactured by Nexperia using NXP Semiconductors technology. This device is specifically designed for use in switch-mode power supplies as well as automotive applications. This MOSFET features a high trigger and holding current, making it a suitable choice for designs with frequency or voltage switching. The device also comes with a very low on-state resistance, making it well-suited for applications where low power dissipation is desired. This device offers a wide range of operation temperatures and superior reliability, ensuring it can function in harsh environments. The PMDXB600UNEZ is an ideal choice for any design requiring superior power efficiency, high speed switching, and reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Availability	Price	Buy Price	Quantity
6742 Ship by Tue. 13 May to Mon. 19 May MOQ : 4566 Multiples : 1	4566 : USD 0.0588 4651 : USD 0.0577 6000 : USD 0.0566

39150 Ship by Fri. 09 May to Tue. 13 May MOQ : 1 Multiples : 1	1 : USD 0.3705 10 : USD 0.2569 100 : USD 0.1004 500 : USD 0.0886 1000 : USD 0.0625 2500 : USD 0.0591 5000 : USD 0.058 10000 : USD 0.0477 25000 : USD 0.0466

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