X-On Electronics has gained recognition as a prominent supplier of PMDXB950UPEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB950UPEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB950UPEZ Nexperia

PMDXB950UPEZ electronic component of Nexperia
PMDXB950UPEZ Nexperia
PMDXB950UPEZ MOSFETs
PMDXB950UPEZ  Semiconductors

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See Product Specifications
Part No. PMDXB950UPEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET
Datasheet: PMDXB950UPEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5175 ea
Line Total: USD 0.52 
Availability - 6138
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3264
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 5
Multiples : 5
5 : USD 0.3698
50 : USD 0.3262
150 : USD 0.2076
500 : USD 0.1918
2500 : USD 0.1847
5000 : USD 0.1806

6138
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5175
10 : USD 0.325
100 : USD 0.1764
500 : USD 0.1386
1000 : USD 0.1144
2500 : USD 0.11
5000 : USD 0.0968
10000 : USD 0.0847
25000 : USD 0.0825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the PMDXB950UPEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB950UPEZ and other electronic components in the MOSFETs category and beyond.

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PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMDXB950UPE 20 V, dual P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa260 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB950UPE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB950UPE 10 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB950UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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