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PMDXB600UNELZ Nexperia
NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET Stock : 6428
NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET Stock : 5000
MOSFET, DUAL P-CH, -20V, -0.5A, DFN1010B Stock : 0
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Schottky Diodes & Rectifiers PMEG040V030EPD/CFP15/REEL 7" Q Stock : 136
Schottky Diodes & Rectifiers Bipolar Discretes SOT1289 Stock : 421
Schottky Diodes & Rectifiers Bipolar Discretes SOT1289 Stock : 4114
Diode Schottky 30V 4.2A 3-Pin CFP15 T/R Stock : 0
Diode Schottky 30V 5A 3-Pin CFP15 T/R Stock : 0
Diode Schottky 40V 5A 3-Pin CFP15 T/R Stock : 0
Field Effect Transistor Silicon Single P-Channel MOS Type -20V -2.5A 64m Ohm 6-Pin UF T/R Stock : 5032
Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3 Stock : 3897
Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R Stock : 1605
PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 470 m DSon 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMDXB600UNE 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB600UNE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB600UNE 00 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB600UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 July 2015 2 / 15
