PMDXB600UNELZ Nexperia

PMDXB600UNELZ electronic component of Nexperia
PMDXB600UNELZ Nexperia
PMDXB600UNELZ MOSFETs
PMDXB600UNELZ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMDXB600UNELZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB600UNELZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMDXB600UNELZ
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 20V 0.6A 6-Pin DFN1010B T/R
Datasheet: PMDXB600UNELZ Datasheet (PDF)
Price (USD)
1: USD 0.38 ea
Line Total: USD 0.38 
Availability : 0
  
QtyUnit Price
1$ 0.38
10$ 0.2325
100$ 0.108
500$ 0.0869
1000$ 0.0781
2500$ 0.0737
5000$ 0.0616
10000$ 0.0528
25000$ 0.0517

Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.1227
10000$ 0.1226
15000$ 0.1223
20000$ 0.1221
25000$ 0.1219
30000$ 0.1217
40000$ 0.1214
50000$ 0.1211
100000$ 0.1209


Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.3742
10$ 0.2424
100$ 0.1261
500$ 0.1147
1000$ 0.1114


Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.0639


Availability 0
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.0965
50$ 0.0942
150$ 0.0929
500$ 0.0915


Availability 0
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.38
10$ 0.2325
100$ 0.108
500$ 0.0869
1000$ 0.0781
2500$ 0.0737
5000$ 0.0616
10000$ 0.0528
25000$ 0.0517

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDXB600UNELZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB600UNELZ and other electronic components in the MOSFETs category and beyond.

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PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 470 m DSon 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMDXB600UNE 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB600UNE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB600UNE 00 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB600UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 July 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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