X-On Electronics has gained recognition as a prominent supplier of 5LN01SP MOSFETs across the USA, India, Europe, Australia, and various other global locations. 5LN01SP MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

5LN01SP ON Semiconductor

5LN01SP electronic component of ON Semiconductor
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See Product Specifications
Part No.5LN01SP
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH Si 50V 0.1A 3-Pin SPA Bag
Datasheet: 5LN01SP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.1364 ea
Line Total: USD 682 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.1364

   
Manufacturer
Product Category
Channel Mode
Power Dissipation
Operating Temperature Classification
Operating Temp Range
Drain-Source On-Volt
Number Of Elements
Continuous Drain Current
Type
Rad Hardened
Polarity
Gate-Source Voltage Max
Mounting
Pin Count
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 5LN01SP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 5LN01SP and other electronic components in the MOSFETs category and beyond.

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Ordering number : EN6559C 5LN01SP N-Channel Small Signal MOSFET 5LN01SP Electrical Characteristics at Ta=25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =50V, V =0V 10 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =100A 0.4 1.3 V GS DS D g Forward Transconductance V =10V, I =50mA 0.13 0.18 S FS DS D R (on)1 I =50mA, V =4V 6 7.8 DS D GS Static Drain to Source On-State Resistance R (on)2 I =30mA, V =2.5V 7.1 9.9 DS D GS R (on)3 I =10mA, V =1.5V 10 20 DS D GS Input Capacitance Ciss 6.6 pF Output Capacitance Coss V =10V, f=1MHz 4.7 pF DS Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time t (on) 18 ns d Rise Time t 42 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 190 ns d Fall Time t 105 ns f Total Gate Charge Qg 1.57 nC Gate to Source Charge Qgs V =10V, V =10V, I =100mA 0.20 nC DS GS D Gate to Drain Miller Charge Qgd 0.32 nC Forward Diode Voltage V I =100mA, V =0V 0.85 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =25V DD V IN 4V 0V I =50mA D V IN R =494 L PW=10s D V OUT D.C.1% G 5LN01SP P.G 50 S No.6559-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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