Product Information

5LN01SS-TL-E

5LN01SS-TL-E electronic component of ON Semiconductor

Datasheet
MOSFET SWITCHING DEVICE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 4579
Multiples : 4579

Stock Image

5LN01SS-TL-E
ON Semiconductor

4579 : USD 0.0948
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

5LN01SS-TL-E
ON Semiconductor

1 : USD 0.4509
10 : USD 0.3405
100 : USD 0.2124
1000 : USD 0.1175
2500 : USD 0.1056
8000 : USD 0.0937
24000 : USD 0.0878
48000 : USD 0.0854
96000 : USD 0.0819
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

LOT No. LOT No. Ordering number : EN6560C 5LN01SS N-Channel Small Signal MOSFET 5LN01SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =50V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =50mA 0.13 0.18 S DS D R (on)1 I =50mA, V =4V 6 7.8 DS D GS Static Drain to Source On-State Resistance R (on)2 I =30mA, V =2.5V 7.1 9.9 DS D GS R (on)3 I =10mA, V =1.5V 10 20 DS D GS Input Capacitance Ciss 6.6 pF Output Capacitance Coss V =10V, f=1MHz 4.7 pF DS Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time t (on) 18 ns d Rise Time t 42 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 190 ns d Fall Time t 105 ns f Total Gate Charge Qg 1.57 nC Gate to Source Charge Qgs V =10V, V =10V, I =100mA 0.20 nC DS GS D Gate to Drain Miller Charge Qgd 0.32 nC Diode Forward Voltage V I =100mA, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V =25V DD V IN 4V 0V I =50mA D V IN R =500 L PW=10 s D V OUT D.C.1% G 5LN01SS P.G 50 S No.6560-2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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