Product Information

5LP01C-TB-E

5LP01C-TB-E electronic component of ON Semiconductor

Datasheet
MOSFET NCH 1.5V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4046 ea
Line Total: USD 0.4

2210 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2204 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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5LP01C-TB-E
ON Semiconductor

1 : USD 0.4174
10 : USD 0.3117
100 : USD 0.1944
1000 : USD 0.107
3000 : USD 0.0978
9000 : USD 0.0851
24000 : USD 0.0816
45000 : USD 0.0782
99000 : USD 0.0748

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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LOT No. LOT No. Ordering number : EN6619C 5LP01C P-Channel Small Signal MOSFET 5LP01C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I = --1mA, V =0V --50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --50V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V = --10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V = --10V, I = --40mA 70 100 mS DS D R (on)1 I = --40mA, V = --4V 18 23 DS D GS Static Drain to Source On-State Resistance R (on)2 I = --20mA, V = --2.5V 20 28 DS D GS R (on)3 I = --5mA, V = --1.5V 30 60 DS D GS Input Capacitance Ciss 7.4 pF Output Capacitance Coss V = --10V, f=1MHz 4.2 pF DS Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time t (on) 20 ns d Rise Time t 35 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 160 ns d Fall Time t 150 ns f Total Gate Charge Qg 1.40 nC Gate to Source Charge Qgs V = --10V, V = --10V, I = --70mA 0.16 nC DS GS D Gate to Drain Miller Charge Qgd 0.23 nC Diode Forward Voltage V I = --70mA, V =0V --0.85 --1.2 V SD S GS Switching Time Test Circuit V = --25V DD V IN 0V I = --40mA D --4V R =625 L V D V IN OUT PW=10 s D.C.1% G 5LP01C P.G 50 S No.6619-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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