Ordering number : ENA1477B
EFC4612R
N-Channel Power MOSFET
EFC4612R
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Source-to-Source Breakdown Voltage V I =1mA, V =0V Test Circuit 1 24 V
(BR)SSS S GS
Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A
SSS SS GS
Gate-to-Source Leakage Current I V =8V, V =0V Test Circuit 2 10 A
GSS GS SS
Cutoff Voltage V (off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V
GS SS S
Forward Transfer Admittance | yfs | V =10V, I =3A Test Circuit 4 3.1 S
SS S
R (on)1 I =3A, V =4.5V Test Circuit 5 24 39 45 m
SS S GS
R (on)2 I =3A, V =4.0V Test Circuit 5 25 41 48 m
SS S GS
Static Source-to-Source On-State Resistance R (on)3 I =3A, V =3.7V Test Circuit 5 27.5 43 50 m
SS S GS
R (on)4 I =3A, V =3.1V Test Circuit 5 31.5 48 57 m
SS S GS
R (on)5 I =3A, V =2.5V Test Circuit 5 33.5 58 72 m
SS S GS
Turn-ON Delay Time
t (on) 20 ns
d
Rise Time
t 230 ns
r
See speci ed Test Circuit. Test Circuit 7
Turn-OFF Delay Time
t (off) 130 ns
d
Fall Time
t 210 ns
f
Total Gate Charge
Qg V =10V, V =4.5V, I =6A 7 nC
SS GS S
Forward Source-to-Source Voltage V I =3A, V =0V Test Circuit 6 0.8 1.2 V
F(S-S) S GS
Ordering Information
Device Package Shipping memo
EFC4612R-TR EFCP 5,000pcs./reel Pb Free and Halogen Free
No. A1477-2/8