Product Information

EFC4621R-TR

EFC4621R-TR electronic component of ON Semiconductor

Datasheet
MOSFET NCH 2.5V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5923 ea
Line Total: USD 0.59

4850 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4830 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

EFC4621R-TR
ON Semiconductor

1 : USD 0.5197
10 : USD 0.4069
30 : USD 0.3506
100 : USD 0.2942
500 : USD 0.2599
1000 : USD 0.2438

4850 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

EFC4621R-TR
ON Semiconductor

1 : USD 0.5923
10 : USD 0.5106
100 : USD 0.3622
500 : USD 0.3117
1000 : USD 0.2473
2500 : USD 0.2461
5000 : USD 0.2392
10000 : USD 0.2311
25000 : USD 0.2277

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Ordering number : ENA2180A EFC4621R Power MOSFET EFC4621R Electrical Characteristics at Ta 25 C Ratings Parameter Symbol Conditions Unit min typ max Source to Source Breakdown Voltage V(BR) I =1mA, V =0V Test Circuit 1 24 V SSS S GS Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V =8V, V =0V Test Circuit 2 1 A GSS GS SS Cutoff Voltage V(off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transfer Admittance yfs V =10V, I =3A Test Circuit 4 7.3 S SS S R(on)1 I =3A, V =4.5V Test Circuit 5 10.8 15.5 18 m SS S GS R(on)2 I =3A, V =4.0V Test Circuit 5 11.1 16 19 m SS S GS Static Source to Source On-State R(on)3 I =3A, V =3.7V Test Circuit 5 11.5 16.5 20 m SS S GS Resistance R(on)4 I =3A, V =3.1V Test Circuit 5 12.5 18 23.5 m SS S GS R(on)5 I =3A, V =2.5V Test Circuit 5 14.9 23 30 m SS S GS Turn-ON Delay Time t (on) 340 ns d Rise Time t 600 ns r V =10V, V =4.5V, I =3A Test Circuit 7 SS GS S Turn-OFF Delay Time t (off) 26000 ns d Fall Time t 28000 ns f Total Gate Charge Qg V =10V, V =4.5V, I =9A Test Circuit 8 29 nC SS GS S Forward Source to Source Voltage V I =3A, V =0V Test Circuit 6 0.77 1.2 V F(S-S) S GS No.A2180-2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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