FDMS86581-F085 MOSFET POWERTRENCH , N-Channel 60 V, 30 A, 15 m Features www.onsemi.com Typical R = 12.5 m at V = 10 V, I = 30 A DS(on) GS D ELECTRICAL CONNECTION Typical Q = 13 nC at V = 10 V, I = 25 A G(tot) GS D UIS Capability G RoHS Compliant D 5 4 Qualified to AEC Q101 S D 6 3 Applications S D 7 2 Automotive Engine Control 1 S D 8 PowerTrain Management Solenoid and Motor Drivers N-Channel MOSFET Electronic Steering Integrated Started/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Ratings Unit V V 60 DraintoSource Voltage DSS Power 56 V V GatetoSource Voltage 20 GS (PQFN8 5x6) A CASE 483BJ I Drain Current Continuous 30 D (VGS = 10) T = 25C (Note 1) C MARKING DIAGRAM Pulsed Drain Current, T = 25C See Figure 4 C mJ E Single Pulse Avalanche Energy 13.5 AS Y&Z&3&K (Note 2) FDMS W 86581 P Power Dissipation 50 D W/C Derate Above 25C 0.33 C T , T 55 to +175 Operating and Storage Temperature J STG Y = ON Semiconductor Logo C/W &Z = Assembly Plant Code R Thermal Resistance, Junction to Case 3 JC &3 = Numeric Date Code C/W R Maximum Thermal Resistance, 50 JA &K = Lot Code Junction to Ambient (Note 3) FDMS86581 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Current is limited by bondwire configuration. See detailed ordering and shipping information on page 2 2. Starting T = 25C, L = 40 H, I = 26 A, V = 60 V during inductor charging J AS DD of this data sheet. and V = 0V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 3 FDMS86581F085/DFDMS86581F085 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping FDMS86581 FDMS86581F085 Power 56 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 60 V VDSS D GS I DraintoSource Leakage Current V = 60 V T = 25C 1 A DSS DS J V = 0 V T = 175C (Note 4) 1 mA GS J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 2.7 4.0 V GS(th) GS DS D R Drain to Source On Resistance I = 30 A T = 25C 12.5 15.0 m DS(on) D J V = 10 V GS T = 175C (Note 4) 25.1 30.1 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 30 V, V = 0 V, f = 1 MHz 881 pF iss DS GS C Output Capacitance 281 pF oss C Reverse Transfer Capacitance 15 pF rss R Gate Resistance f = 1 MHz 3.1 G Q Total Gate Charge V = 0 to 10 V 13 19 nC GS g(ToT) Q Threshold Gate Charge 2 nC g(th) V = 0 to 2 V GS V = 30 V DD Q GatetoSource Gate Charge 4 nC gs I = 25 A D Q GatetoDrain Miller Charge 3 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 30 V, I = 30 A 20 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay ns 9 d(on) t Rise Time ns r 5 t TurnOff Delay ns d(off) 15 t Fall Time 4 ns f t TurnOff Time 28 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 30 A, V = 0 V 1.25 V SD SD GS I = 15 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time I = 30 A, dl /dt = 100 A/ s, 37 55 ns rr F SD V = 48 V DD Q Reverse Recovery Charge 22 33 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2