TM
FDMS8670AS N-Channel PowerTrench SyncFET
May 2009
FDMS8670AS
tm
TM
N-Channel PowerTrench SyncFET
30V, 42A, 3.0m:
Features General Description
Max r = 3.0m : at V = 10V, I = 23A The FDMS8670AS has been designed to minimize losses in
DS(on) GS D
power conversion application. Advancements in both silicon and
Max r = 4.7m : at V = 4.5V, I = 18A
DS(on) GS D
package technologies have been combined to offer the lowest
Advanced Package and Silicon combination r while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
for low r and high efficiency
DS(on)
body diode.
SyncFET Schottky Body Diode
Applications
MSL1 robust package design
Synchronous Rectifier for DC/DC Converters
RoHS Compliant
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S
D 5 4 G
S
S
G
D 6 3 S
D 7 2 S
D
D
D D 8 1 S
D
Power 56
MOSFET Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter Ratings Units
V Drain to Source Voltage 30 V
DS
V Gate to Source Voltage 20 V
GS
Drain Current -Continuous (Package limited) T = 25C 42
C
-Continuous (Silicon limited) T = 25C 127
C
I A
D
-Continuous T = 25C (Note 1a) 23
A
-Pulsed 200
E Single Pulse Avalanche Energy 384 mJ
AS
Power Dissipation T = 25C 78
C
P W
D
Power Dissipation T = 25C (Note 1a) 2.5
A
T , T Operating and Storage Junction Temperature Range -55 to +150 C
J STG
Thermal Characteristics
R Thermal Resistance, Junction to Case 1.6
T JC
C/W
R Thermal Resistance, Junction to Ambient (Note 1a) 50
T JA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8670AS FDMS8670AS Power 56 13 12mm 3000units
1
2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMS8670AS Rev.C2 TM
FDMS8670AS N-Channel PowerTrench SyncFET
Electrical Characteristics T = 25C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV Drain to Source Breakdown Voltage I = 1mA, V = 0V 30 V
DSS D GS
' BV Breakdown Voltage Temperature
DSS
I = 10mA, referenced to 25C 28 mV/C
D
T Coefficient
J
I Zero Gate Voltage Drain Current V = 24V, V = 0V 500 P A
DSS DS GS
I Gate to Source Leakage Current V = 20V, V = 0V 100 nA
GSS GS DS
On Characteristics
V Gate to Source Threshold Voltage V = V , I = 1mA 1.0 1.7 3.0 V
GS(th) GS DS D
V Gate to Source Threshold Voltage
GS(th)
I = 10mA, referenced to 25C -5 mV/C
D
T Temperature Coefficient
J
V = 10V, I = 23A 2.4 3.0
GS D
r Static Drain to Source On Resistance V = 4.5V, I = 18A 3.5 4.7 m :
DS(on) GS D
V = 10V, I = 23A, T = 125C 3.5 4.7
GS D J
g Forward Transconductance V = 10V, I = 23A 143 S
FS DD D
Dynamic Characteristics
C Input Capacitance 2718 3615 pF
iss
V = 15V, V = 0V,
DS GS
C Output Capacitance 1537 2045 pF
oss
f = 1MHz
C Reverse Transfer Capacitance 343 515 pF
rss
R Gate Resistance f = 1MHz 0.9 :
g
Switching Characteristics
t Turn-On Delay Time 14 26 ns
d(on)
V = 15V, I = 23A,
DD D
t Rise Time 510 ns
r
V = 10V, R = 6 :
GS GEN
t Turn-Off Delay Time 32 52 ns
d(off)
t Fall Time 410 ns
f
Q Total Gate Charge V = 0V to 10V 39 55 nC
g GS
V = 15V,
DD
Q Total Gate Charge V = 0V to 4.5V 20 28 nC
g GS
I = 23A
D
Q Gate to Source Charge 7.2 nC
gs
Q Gate to Drain Miller Charge 4.0 nC
gd
Drain-Source Diode Characteristics
V Source to Drain Diode Forward Voltage V = 0V, I =2A (Note 3) 0.4 0.7 V
SD GS S
t Reverse Recovery Time 39 63 ns
rr
I = 23A, di/dt = 300A/ P s
F
Q Reverse Recovery Charge 48 77 nC
rr
NOTES:
2
1. R is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R is guaranteed by design while R is determined by
T JA T JC T CA
the user's board design.
b. 125C/W when mounted on a
a. 50C/W when mounted on
minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Starting T = 25C, L = 3mH, I = 16A, V = 30V, V =10V.
J AS DD GS
3. Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%.
2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2
FDMS8670AS Rev.C2
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