X-On Electronics has gained recognition as a prominent supplier of FDZ1323NZ mosfet across the USA, India, Europe, Australia, and various other global locations. FDZ1323NZ mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDZ1323NZ

FDZ1323NZ electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDZ1323NZ
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
Datasheet: FDZ1323NZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.4701 ea
Line Total: USD 2350.5

Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5000
Multiples : 5000
5000 : USD 0.721
10000 : USD 0.6855

0 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 3.5261
10 : USD 1.3245
100 : USD 0.9851
500 : USD 0.8132
1000 : USD 0.6421
2500 : USD 0.6037
5000 : USD 0.6026

0 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5000
Multiples : 5000
5000 : USD 0.4701

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET September 2014 FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET 20 V, 10 A, 13 m Features General Description This device is designed specifically as a single package solution Max r = 13 m at V = 4.5 V, I = 1 A S1S2(on) GS S1S2 for Li-Ion battery pack protection circuit and other ultra-portable Max r = 13 m at V = 3.8 V, I = 1 A S1S2(on) GS S1S2 applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Max r = 16 m at V = 3.1 V, I = 1 A S1S2(on) GS S1S2 Fairchilds advanced PowerTrench process with state of the art Max r = 18 m at V = 2.5 V, I = 1 A low pitch WLCSP packaging process, the FDZ1323NZ S1S2(on) GS S1S2 minimizes both PCB space and r . This advanced 2 S1S2(on) Occupies only 3 mm of PCB area WLCSP MOSFET embodies a breakthrough in packaging Ultra-thin package: less than 0.35 mm height when mounted technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low to PCB gate charge and low r . S1S2(on) High power and current handling capability Applications HBM ESD protection level > 3.6 kV (Note 3) RoHS Compliant Battery management Load switch Battery protection S1 PIN1 PIN1 G1 S1 G1 S2 S1 G2 S2 G2 BOTTOM TOP WL-CSP 1.3X2.3 S2 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Source1 to Source2 Voltage 20 V S1S2 V Gate to Source Voltage 12 V GS Source1 to Source2 Current -Continuous T = 25C (Note 1a) 10 A I A S1S2 -Pulsed 40 Power Dissipation T = 25C (Note 1a) 2 A P W D Power Dissipation T = 25C (Note 1b) 0.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 62 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 257 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity EC FDZ1323NZ WL-CSP 1.3X2.3 7 8 mm 5000 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ1323NZ Rev.C7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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