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FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET December 2014 FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 m Features General Description Max r = 64 m at V = -4.5 V, I = -2.0 A Designed on Fairchild s advanced 1.5 V PowerTrench process DS(on) GS D with state of the artfine pitc WLCSP packaging process, the Max r = 71 m at V = -2.5 V, I = -2.0 A DS(on) GS D FDZ197PZ minimizes both PCB space and r . This DS(on) Max r = 79 m at V = -1.8 V, I = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in DS(on) GS D packaging technology which enables the device to combine Max r = 95 m at V = -1.5 V, I = -1.0 A DS(on) GS D excellent thermal transfer characteristics, ultra-low profile 2 Occupies only 1.5 mm of PCB area.Less than 50% of the packaging, low gate charge, and low r . DS(on) area of 2 x 2 BGA Applications Ultra-thin package: less than 0.65 mm height when mounted to PCB Battery management Load switch HBM ESD protection level > 4400V (Note3) Battery protection RoHS Compliant PIN1 S S G D S D TOP BOTTOM WL-CSP 1x1.5 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25C (Note 1a) -3.8 A I A D -Pulsed -15 Power Dissipation T = 25C (Note 1a) 1.9 A P W D Power Dissipation T = 25C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 7 FDZ197PZ WL-CSP 1x1.5 Thin 7 8 mm 5000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ197PZ Rev.C3