FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET
February 2006
FDZ206P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description Features
Combining Fairchilds advanced 2.5V specified
13 A, 20 V. r = 9.5 mW @ V = 4.5 V
DS(on) GS
PowerTrench process with state of the art BGA
r = 14.5 mW @ V = 2.5 V
DS(on) GS
packaging, the FDZ206P minimizes both PCB space
and r . This BGA MOSFET embodies a
DS(on)
2
Occupies only 14 mm of PCB area.
breakthrough in packaging technology which enables
Only 42% of the area of SO-8
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
Ultra-thin package: less than 0.80 mm height when
low profile packaging, low gate charge, and low r .
DS(on)
mounted to PCB
Applications
0.65 mm ball pitch
Battery management 2
3.5 x 4 mm footprint
Load switch
High power and current handling capability
Battery protection
S
Gate
G
Index
D
slot
Top
Bottom
o
Absolute Maximum Ratings T =25 C unless otherwise noted
A
Symbol Parameter Ratings Units
V Drain-Source Voltage 20 V
DSS
VGS Gate-Source Voltage 12 V
I Drain Current Continuous (Note 1a) 13 A
D
Pulsed 60
P Power Dissipation (Steady State) (Note 1a) 2.2 W
D
T , T Operating and Storage Junction Temperature Range 55 to +150 C
J STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a) 56
R C/W
qJA
Thermal Resistance, Junction-to-Ball (Note 1) 4.5
R
qJB
R Thermal Resistance, Junction-to-Case (Note 1) 0.6
qJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
206P FDZ206P 13 12mm 4000
FDZ206P Rev. E (W)
2006 Fairchild Semiconductor Corporation
FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET
Electrical Characteristics T = 25C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV DrainSource Breakdown Voltage V = 0 V, I = 250 mA 20 V
DSS GS D
Breakdown Voltage Temperature 13
DBVDSS ID = 250 mA, Referenced to 25C mV/C
Coefficient
DT
J
I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 mA
DSS DS GS
I GateBody Forward Leakage V = 12 V, V = 0 V 100 nA
GSSF GS DS
I GateBody Reverse Leakage V = 12 V, V = 0 V 100 nA
GSSR GS DS
On Characteristics (Note 2)
V Gate Threshold Voltage 0.6 0.9 1.5 V
GS(th) V = V , I = 250 mA
DS GS D
Gate Threshold Voltage 3.3
DVGS(th) I = 250 mA, Referenced to 25C mV/C
D
Temperature Coefficient
DT
J
r Static DrainSource V = 4.5 V, I = 13 A 7 9.5
DS(on) GS D mW
OnResistance V = 2.5 V, I = 10.5 A 10 14.5
GS D
9 13
V = 4.5 V, I = 13 A, T =125C
GS D J
I OnState Drain Current V = 4.5 V, V = 5 V 60 A
D(on) GS DS
g Forward Transconductance V = 5 V, I = 13 A 58 S
FS DS D
Dynamic Characteristics
C Input Capacitance V = 10 V, V = 0 V, 4280 pF
iss DS GS
C Output Capacitance 873 pF
oss
f = 1.0 MHz
C Reverse Transfer Capacitance 400 pF
rss
Switching Characteristics (Note 2)
t TurnOn Delay Time V = 10 V, I = 1 A, 17 31 ns
d(on) DD D
t TurnOn Rise Time V = 4.5 V, R = 6 W 11 20 ns
r GS GEN
t TurnOff Delay Time 115 184 ns
d(off)
t TurnOff Fall Time 60 96 ns
f
Q Total Gate Charge V = 10 V, I = 13 A, 38 53 nC
g DS D
V = 4.5 V
Q GateSource Charge GS 7 nC
gs
Q GateDrain Charge 10 nC
gd
DrainSource Diode Characteristics and Maximum Ratings
I Maximum Continuous DrainSource Diode Forward Current 1.8 A
S
V DrainSource Diode Forward V = 0 V, I = 1.8 A (Note 2) 0.7 1.2 V
SD GS S
Voltage
t Diode Reverse Recovery Time I = 13A, 34 nS
rr F
d /d = 100 A/s
iF t
Q Diode Reverse Recovery Charge 38 nC
rr
Notes:
1. R is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
qJA
circuit board side of the solder ball, R , is defined for reference. For R , the thermal reference point for the case is defined as the top surface of the copper
qJB qJC
chip carrier. R and R are guaranteed by design while R is determined by the user's board design.
qJC qJB qJA
a) 56C/W when b) 119C/W when mounted
2
mounted on a 1in pad on a minimum pad of 2 oz
of 2 oz copper copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDZ206P Rev. E (W)