NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low onstate voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated NGTB25N120LWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.65 C/W JC Thermal resistance junctiontocase, for Diode R 1.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 1.85 2.3 V GE C CEsat V = 15 V, I = 25 A, T = 150C 2.1 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC pF Input capacitance C 4700 ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 155 CE GE oes Reverse transfer capacitance C 100 res nC Gate charge total Q 200 g Gate to emitter charge Q 38 V = 600 V, I = 25 A, V = 15 V CE C GE ge Gate to collector charge Q 100 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time t 89 d(on) Rise time t 29 r ns T = 25C J Turn-off delay time t 235 d(off) V = 600 V, I = 25 A CC C R = 10 g Fall time t 160 f V = 0 V/ 15 V GE Turn-on switching loss E 3.4 on mJ Turn-off switching loss E 0.8 off Turn-on delay time t 88 d(on) Rise time t 29 r ns T = 125C J Turn-off delay time t 250 d(off) V = 600 V, I = 25 A CC C R = 10 Fall time g t 225 f V = 0 V/ 15 V GE Turn-on switching loss E 4.4 on mJ Turn-off switching loss E 1.9 off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 25 A V 1.7 1.8 V GE F F V = 0 V, I = 25 A, T = 150C 1.8 GE F J