NGTB30N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.onsemi.com and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology 30 A, 1200 V T = 175C Jmax V = 2.0 V CEsat Soft Fast Reverse Recovery Diode E = 0.7 mJ off Optimized for High Speed Switching 10 s Short Circuit Capability C This is a PbFree Device Typical Applications Solar Inverter G Uninterruptible Power Supplies (UPS) Welding E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1200 V CES Collector current I A C TC = 25C 60 TO247 G TC = 100C 30 C CASE 340AL E Pulsed collector current, T I 120 A pulse CM limited by T , 10 s Pulse, Jmax V = 15 V GE Diode forward current I A MARKING DIAGRAM F TC = 25C 60 TC = 100C 30 Diode pulsed current, T limited I 120 A pulse FM by T Jmax Gateemitter voltage V 20 V GE 30N120FL2 Transient gateemitter voltage 30 AYWWG (T = 5 s, D < 0.10) pulse Power Dissipation P W D TC = 25C 452 TC = 100C 227 Short Circuit Withstand Time T 10 s SC V = 15 V, V = 500 V, T 150C GE CE J A = Assembly Location Operating junction temperature T 55 to +175 C J Y = Year range WW = Work Week Storage temperature range T 55 to +175 C stg G = PbFree Package Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. NGTB30N120FL2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2015 Rev. 1 NGTB30N120FL2W/DNGTB30N120FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.33 C/W JC Thermal resistance junctiontocase, for Diode R 0.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 2.00 2.30 V GE C CEsat V = 15 V, I = 30 A, T = 175C GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 1.0 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 5250 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 170 oes CE GE Reverse transfer capacitance C 100 res nC Gate charge total Q 220 g Gate to emitter charge V = 600 V, I = 30 A, V = 15 V Q 45 CE C GE ge Gate to collector charge Q 105 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 98 ns d(on) Rise time t 35 r Turnoff delay time t 210 T = 25C J d(off) V = 600 V, I = 30 A CC C Fall time t 130 f R = 10 g mJ Turnon switching loss V = 0 V/ 15V E 2.6 GE on Turnoff switching loss E 0.7 off Total switching loss E 3.3 ts Turnon delay time t 92 ns d(on) Rise time t 35 r Turnoff delay time t 220 T = 175C J d(off) V = 600 V, I = 30 A CC C Fall time t 260 f R = 10 g Turnon switching loss V = 0 V/ 15V E 3.5 mJ GE on Turnoff switching loss E 1.8 off Total switching loss E 5.3 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.75 V GE F F V = 0 V, I = 30 A, T = 175C GE F J Reverse recovery time T = 25C t 240 ns J rr I = 30 A, V = 400 V F R Reverse recovery charge Q 2.5 c rr di /dt = 200 A/ s F Reverse recovery current I 18 A rrm Reverse recovery time T = 175C t 413 ns J rr I = 30 A, V = 400 V F R Reverse recovery charge Q 4.3 c rr di /dt = 200 A/ s F Reverse recovery current I 20 A rrm www.onsemi.com 2