NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com copackaged free wheeling diode with a low forward voltage. Features 25 A, 1200 V T = 175C Jmax V = 2.0 V CEsat Soft Fast Reverse Recovery Diode E = 0.60 mJ off Optimized for High Speed Switching 10 s Short Circuit Capability C These are PbFree Devices Typical Applications Welding G ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 1200 V CES Collector current I A C TC = 25C 50 TC = 100C 25 Pulsed collector current, T I 100 A pulse CM G TO247 limited by T Jmax C CASE 340AL E Diode forward current I A F TC = 25C 50 TC = 100C 25 Diode pulsed current, T limited I 100 A pulse FM MARKING DIAGRAM by T Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse Power Dissipation P W D TC = 25C 385 25N120S TC = 100C 192 AYWWG Short Circuit Withstand Time T 10 s SC V = 15 V, V = 500 V, T 150C GE CE J Operating junction temperature T 55 to +175 C J range Storage temperature range T 55 to +175 C stg A = Assembly Location Lead temperature for soldering, 1/8 T 260 C SLD Y = Year from case for 5 seconds WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NGTB25N120SWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2017 Rev. 2 NGTB25N120SW/DNGTB25N120SWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.39 C/W JC Thermal resistance junctiontocase, for Diode R 0.63 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 2.00 2.40 V GE C CEsat V = 15 V, I = 25 A, T = 175C 2.40 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited pF Input capacitance C 4420 ies Output capacitance C 151 V = 20 V, V = 0 V, f = 1 MHz CE GE oes Reverse transfer capacitance C 81 res nC Gate charge total Q 178 g Gate to emitter charge Q 39 V = 600 V, I = 25 A, V = 15 V CE C GE ge Gate to collector charge Q 83 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 87 ns d(on) Rise time t 74 r Turnoff delay time t 179 T = 25C d(off) J V = 600 V, I = 25 A CC C Fall time t 136 f R = 10 g V = 0 V/ 15V Turnon switching loss E 1.95 mJ GE on Turnoff switching loss E 0.60 off Total switching loss E 2.55 ts Turnon delay time t 84 ns d(on) Rise time t 94 r Turnoff delay time t 185 T = 150C d(off) J V = 600 V, I = 25 A CC C Fall time t 245 f R = 10 g V = 0 V/ 15V mJ Turnon switching loss E 2.39 GE on Turnoff switching loss E 1.26 off Total switching loss E 3.65 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 25 A V 2.10 2.60 V GE F F V = 0 V, I = 50 A, T = 175C 2.30 GE F J Reverse recovery time T = 25C t 154 ns J rr I = 25 A, V = 400 V F R Reverse recovery charge Q 1.3 c rr di /dt = 200 A/ s F Reverse recovery current I 15 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2