NGTB30N135IHR1WG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low onstate voltage with minimal switching losses. The IGBT is well www.onsemi.com suited for resonant or soft switching applications. Features 30 A, 1350 V Extremely Efficient Trench with Fieldstop Technology V = 2.4 V CEsat 1350 V Breakdown Voltage E = 0.63 mJ off Optimized for Low Losses in IH Cooker Application Designed for High System Level Robustness C These are PbFree Devices Typical Applications Inductive Heating G Consumer Appliances Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1350 V CES T = 25C J Collector current I A C TC = 25C 60 G TO247 TC = 100C 30 C CASE 340AL E Pulsed collector current, T I 120 A pulse CM limited by T 10 s pulse, Jmax V = 15 V GE MARKING DIAGRAM Diode forward current I A F TC = 25C 60 TC = 100C 30 Diode pulsed current, T limited I 120 A pulse FM by T 10 s pulse, V = 0 V Jmax GE Gateemitter voltage V 20 V 30N135IHR1 GE Transient Gateemitter Voltage 25 AYWWG (T = 5 s, D < 0.10) pulse Power Dissipation P W D TC = 25C 394 TC = 100C 197 Operating junction temperature range T 40 to +175 C J A = Assembly Location Storage temperature range T 55 to +175 C stg Y = Year Lead temperature for soldering, 1/8 T 260 C SLD WW = Work Week from case for 5 seconds G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping NGTB30N135IHR1WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2015 Rev. 0 NGTB30N135IHR1/DNGTB30N135IHR1WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.38 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V 1350 V V = 0 V, I = 5 mA GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 2.4 3.0 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.6 GE C J Gateemitter threshold voltage V = V , I = 250 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1350 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1350 V, T 175C 5.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5530 pF ies Output capacitance C 124 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 100 res Gate charge total Q 220 nC g Gate to emitter charge Q 47 V = 600 V, I = 30 A, V = 15 V ge CE C GE Gate to collector charge Q 100 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 200 ns d(off) T = 25C J V = 600 V, I = 30 A CC C Fall time t 124 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.63 mJ GE off Turnoff delay time t 222 ns d(off) T = 150C J V = 600 V, I = 30 A CC C Fall time t 221 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 1.50 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 1.7 2.2 V GE F F V = 0 V, I = 30 A, T = 175C 2.1 GE F J www.onsemi.com 2