NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low onstate voltage with minimal switching losses. The IGBT is well NGTB30N135IHRWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.38 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 5 mA V 1350 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 2.30 2.65 V GE C CEsat V = 15 V, I = 30 A, T = 175C 2.50 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 250 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1350 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1350 V, T 175C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5290 pF ies Output capacitance C 124 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 100 res Gate charge total Q 234 nC g Gate to emitter charge Q 39 V = 600 V, I = 30 A, V = 15 V ge CE C GE Gate to collector charge Q 105 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 250 ns d(off) T = 25C J V = 600 V, I = 30 A CC C Fall time t 150 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.85 mJ GE off ns Turnoff delay time t 265 d(off) T = 150C J V = 600 V, I = 30 A CC C Fall time t 225 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 1.90 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 2.10 2.40 V GE F F V = 0 V, I = 30 A, T = 175C 3.20 GE F J