X-On Electronics has gained recognition as a prominent supplier of F1102NBGI rf mixer across the USA, India, Europe, Australia, and various other global locations. F1102NBGI rf mixer are a product manufactured by Renesas. We provide cost-effective solutions for rf mixer, ensuring timely deliveries around the world.

F1102NBGI Renesas

F1102NBGI electronic component of Renesas
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Part No.F1102NBGI
Manufacturer: Renesas
Category:RF Mixer
Description: RF Mixer RF MIXER 0.35 UM SIGE BICMOS
Datasheet: F1102NBGI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.2174 ea
Line Total: USD 14.22

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 15.6625
10 : USD 13.818
25 : USD 13.2451
80 : USD 11.67
230 : USD 11.0973
490 : USD 10.633

0 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 490
Multiples : 490
490 : USD 8.556
980 : USD 8.4985
2940 : USD 8.4985
5390 : USD 8.4985

     
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We are delighted to provide the F1102NBGI from our RF Mixer category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F1102NBGI and other electronic components in the RF Mixer category and beyond.

DATASHEET RF to IF Dual Downconverting Mixer 400 1000 MHz F1102NBGI FEATURES GENERAL DESCRIPTION Dual Path for Diversity Systems This document describes the specifications for the TM Ideal for Multi-Carrier Systems IDTF1102 Zero-Distortion RF to IF Downconverting 9.0 dB Gain Mixer. This device is part of a series of downconverting Ultra linear: mixers covering all UTRA bands. See the Part Matrix ++4433 ddBBmm IIPP33 ((SSTTDD MMooddee)) for the details of all devices in the series. OO +36 dBm IP3 (LC Mode) O The F1102 dual channel device operates with a single Low NF < 10 dB 5V supply. It is optimized for operation in a Multi- Extended LO level range for MIMO (-6 dBm) carrier BaseStation Receiver for RF bands from 698 to 200 output impedance 915 MHz with High or Low Side Injection. IF Ultra high +13 dBm P1dB I frequencies from 50 to 300 MHz are supported. The PPiinn CCoommppaattiibbllee with existing solutions FF11110022 aallssoo ssuuppppoorrttss the 400 MHz RF bands with some 6x6 36 pin package simple external matching modifications (see page 25). Power Down mode Power Down mode Nominally, the device offers +43 dBm Output IP3 with < 200 nsec settling from Power Down 330 mA of I . Alternately one can adjust 4 resistor CC Minimizes Synth pulling in Standby Mode values and a toggle pin to run the devices in low Low Current Mode : II == 223355 mmAA CC CC current mode (LC mode) with +36 dBm Output IP3 Standard Mode: I = 330 mA CC and 235 mA of I . CC COMPETITIVE ADVANTAGE DEVICE BLOCK DIAGRAM In typical basestation receivers the mixer limits the linearity performance for the entire receive system. The F1102 with Zero-Distortion technology dramatically improves the maximum IM interference that the BTS RF IN A 3 can withstand at a desired Signal to Noise Ratio (SNR.) IF OUT A Alternately, one can run the device in LC Mode to reduce Power consumption significantly. STBY RF VCO Bias 2 LO ISET IP3 : 7 dB STD Mode, Control O LC MODE 3 dB LC Mode RF IN B Dissipation: 40% LC IF OUT B Mode, 12% STD Mode Allows for higher RF gain improving Sensitivity PART MATRIX Part RF freq UTRA bands IF freq Typ. Injection ORDERING INFORMATION range range Gain 5,6,8,12,13,14,17 F1100 698 - 915 150 - 450 8.3 High Side Omit IDT Tape & ,19,20 0.8 mm height prefix Reel 55,,66,,88,,1122,,1133,,1144,,1177 package F1102 400 - 1000 50 - 300 9.0 Both F1102 400 - 1000 50 - 300 9.0 Both ,,1199,,2200 1,2,3,4,9,10, 33, 2 F1150 1700 - 2200 50 - 450 8.5 High Side 34,35, 36, 37,39 1 IDTF1102NBGI8 1,2,3,4,9,10, 21 , 1 F1152 1400 - 2200 24 , 33, 34,35, 50 - 350 8.5 Low Side 36, 37,39 Green RF product Line Industrial 2 F1162 2300 2700 7,38,40,41 50 500 8.8 Low Side Temp range 1 with High side injection 2 With High side or Low side injection TM IDT Zero-Distortion Mixer 1 RevO, August 2012 DATASHEET RF to IF Dual Downconverting Mixer 400 1000 MHz F1102NBGI ABSOLUTE MAXIMUM RATINGS VCC to GND -0.3V to +5.5V STBY, LC -0.3V to (VCC + 0.3V) MODE IF A+, IF B+, IF A-, IF B-, LO1 ADJ, LO2 ADJ -0.3V to (VCC + 0.3V) LO IN, LO IN ALT, RF A, RF B -0.3V to +0.3V IF BiasA, IF BiasB to GND -0.3V to +0.3V RF Input Power (RF A, RF B) +20dBm Continuous Power Dissipation 2.2W (Junction Ambient) +35C/W JA (Junction Case) The Case is defined as the exposed paddle +2.5C/W JC Operating Temperature Range (Case Temperature) T = -40C to +100C C Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) . +260C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TM IDT Zero-Distortion Mixer 2 RevO, August 2012

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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