Product Information

F1178NBGI

F1178NBGI electronic component of Renesas

Datasheet
Up-Down Converters DPD Mixer 0.35 UM SIGE BICMOS

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.8375 ea
Line Total: USD 11.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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F1178NBGI
Renesas

1 : USD 11.8375
10 : USD 10.2708
25 : USD 9.7934
80 : USD 8.5034
230 : USD 8.1213
490 : USD 7.4047
980 : USD 6.4492

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 490
Multiples : 490

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F1178NBGI
Renesas

490 : USD 5.6695
2940 : USD 5.6695
5390 : USD 5.6695

     
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IDTF1178NBGI Datasheet RF to IF Dual Downconverting Mixer 3400MHz 3800MHz GENERAL DESCRIPTION FEATURES This document describes the specifications for the Dual Path for Diversity Systems TM IDTF1178 Zero-Distortion RF to IF Downconverting Ideal for Multi-Carrier Systems Dual Mixer. This device is part of a series of mixers 9dB Gain offered with high side and/or low side injection options Ultra linear ++3377..55ddBBmm IIPP33 O O for all UTRA bands. See the Part Matrix for pin 8.5dB NF compatible & feature compatible devices in this series. 200 output impedance High +11dBm P1dB I The F1178 dual channel device is designed to operate Pin & Feature Compatible Pin & Feature Compatible with a single 5V supply. It is optimized for operation in 6mm x 6mm, 36-pin package a Multi-mode, Multi-carrier BaseStation Receiver for RF Individual Path Standby Mode Individual Path Standby Mode bands from 3400MHz - 3800MHz with Low Side LO <400 nsec settling from Power Up injection. IF frequencies from 30MHz to 550MHz are I = 297mA CC supported. Nominally, the device offers +37.5dBm Output IP3 with 297mA of I . CC DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE In typical basestation receivers, the RF to IF mixer dominates the linearity performance for the entire TM receive system. The Zero-Distortion family of mixers dramatically improves the maximum signal levels (IM 3 tones) that the BTS can withstand at a desired Signal to TM Noise Ratio (SNR). Zero-Distortion technology allows realization of either benefit. IP3 : 9dB O Dissipation: 23% Noise Figure: 8.5dB PART MATRIX Part RF freq UTRA bands IF freq Typ. Injection range range Gain (MHz) (MHz) (dB) 5,6,8,12,13,14,17, ORDERING INFORMATION F1100 698 - 915 150 - 450 9.0 High Side 19,20 5,6,8,12,13,14,17, Omit IDT F1102 400 - 1000 50 - 300 9.0 Both Tape & 0.8 mm height 19,20 prefix Reel package 1,2,3,4,9,10, 33, F1150 1700 - 2200 50 - 450 8.5 High Side 34,35, 36, 37,39 1 1,2,3,4,9,10,11 , 1 1 F1152 1400 - 2200 21 , 24 , 33, 34,35, 50 - 350 8.5 Low Side IDTF1178NBGI8 36, 37,39 FF11116622 22330000 22770000 77,,3388,,4400,,4411 5500 550000 88..99 BBootthh Green RF product Line Industrial Temp range FF11117788 33440000 -- 33880000 2222,, 4422,, 4433 3300 -- 555500 99..00 LLooww SSiiddee 1 with High Side injection TM IDT Zero-Distortion Mixer 1 Rev1, December 2014 IDTF1178NBGI Datasheet RF to IF Dual Downconverting Mixer 3400MHz 3800MHz ABSOLUTE MAXIMUM RATINGS Parameter / Condition Symbol Min Max Unit VCC to GND VCC -0.3 +5.5 V STBY1, STBY2 V , V -0.3 VCC + 0.3 V STBY1 STBY2 IF A+, IF B+, IF A-, IF B- V , +1.0 VCC+ 0.3 V IF A+ V , V , IF B+ IF A- V IF B- LO1 ADJ V +1.0 3.0 V LO1 ADJ LO2 ADJ V +2.1 4.0 V LO2 ADJ LO IN, RF A, RF B V , V , -0.3 +0.3 V LO IN RF A V RF B IF BiasA, IF BiasB to GND V , -0.3 +0.3 V IF BiasA V IF BiasB RF Input Power P , P , +20 dBm LO IN RF A P RF B Continuous Power Dissipation 2.2 W Operating Temperature Range (Case T -40 +105 C C Temperature) Maximum Junction Temperature T 150 C Jmax Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) T +260 C LEAD ESD Voltage HBM (Per JESD22-A114) V Class 2 ESDHBM (2500V) ESD Voltage CDM (Per JESD22-C101) V Class C3 ESDCDM (1000V) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 35C/W JA (Junction Case) The Case is defined as the exposed paddle 2.5C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL 1 TM IDT Zero-Distortion Mixer 2 Rev1, December 2014

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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