X-On Electronics has gained recognition as a prominent supplier of STGWT40H65DFB igbt transistors across the USA, India, Europe, Australia, and various other global locations. STGWT40H65DFB igbt transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

STGWT40H65DFB STMicroelectronics

STGWT40H65DFB electronic component of STMicroelectronics
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Part No.STGWT40H65DFB
Manufacturer: STMicroelectronics
Category:IGBT Transistors
Description: IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Datasheet: STGWT40H65DFB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 5.56 ea
Line Total: USD 5.56

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MOQ: 1  Multiples: 1
Pack Size: 1
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STGWT40H65DFB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWT40H65DFB and other electronic components in the IGBT Transistors category and beyond.

STGWT40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features TAB Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 3 2 Low saturation voltage: V = 1.6 V (typ.) I = 40 A CE(sat) C 1 TO-3P Tight parameter distribution Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWT40H65DFB Product summary Order code STGWT40H65DFB Marking GWT40H65DFB Package TO-3P Packing Tube DS11705 - Rev 2 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGWT40H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 80 C I A F Continuous forward current at T = 100 C 40 C (1) I Pulsed forward current 160 A FP P Total power dissipation at T = 25 C 283 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.53 thJC R Thermal resistance junction-case diode 1.14 C/W thJC R Thermal resistance junction-ambient 50 thJA DS11705 - Rev 2 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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