Product Information

STGWT40HP65FB

STGWT40HP65FB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4896 ea
Line Total: USD 4.49

116 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
116 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWT40HP65FB
STMicroelectronics

1 : USD 4.3864
10 : USD 3.8325
30 : USD 3.5042
90 : USD 3.1719
510 : USD 3.0189
990 : USD 2.9484

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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Additional Infomation About Product

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Minimized tail current VCE(sat) = 1.6 V (typ.) IC = 40 A Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 Low thermal resistance 1 TO-3P Applications Figure 1: Internal schematic diagram Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWT40HP65FB GWT40HP65FB TO-3P Tube July 2016 DocID028465 Rev 3 1/17 www.st.com This is information on a product in full production. Contents STGWT40HP65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-3P package information ............................................................ 14 5 Revision history ............................................................................ 16 2/17 DocID028465 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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