STGWT60H60DLFB STMicroelectronics

STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current V = 1.6 V (typ.) I = 60 A CE(sat) C Tight parameters distribution 3 2 3 1 Safe paralleling 2 1 Low thermal resistance Low V soft recovery co-packaged diode F TO-247 TO-3P Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2 or TAB) Microwave oven Resonant converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the newH series of IGBTs, which represent an optimum compromise between conduction and switching E (3) losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H60DLFB GW60H60DLFB TO-247 Tube STGWT60H60DLFB GWT60H60DLFB TO-3P Tube February 2014 DocID024403 Rev 3 1/17 This is information on a product in full production. www.st.com 17Contents STGW60H60DLFB, STGWT60H60DLFB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID024403 Rev 3