STGWT60H65FB STMicroelectronics

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current V = 1.6 V (typ.) I = 60 A CE(sat) C Tight parameters distribution 3 3 2 Safe paralleling 2 1 1 Low thermal resistance TO-247 TO-3P Applications Photovoltaic inverters Figure 1. Internal schematic diagram High frequency converters C (2, TAB) Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum G (1) compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packing STGW60H65FB GW60H65FB TO-247 Tube STGWT60H65FB GWT60H65FB TO-3P Tube April 2015 DocID025187 Rev 4 1/16 This is information on a product in full production. www.st.com 16Contents STGW60H65FB, STGWT60H65FB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curve) . 6 3 Test circuits 10 4 Package information 11 4.1 TO-247 package information .11 4.2 TO-3P package information . 13 5 Revision history . 15 2/16 DocID025187 Rev 4