Product Information

STGWT40H65FB

STGWT40H65FB electronic component of STMicroelectronics

Datasheet
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 1.5808 ea
Line Total: USD 7.9

489 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
489 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STGWT40H65FB
STMicroelectronics

1 : USD 1.5984

489 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5
Multiples : 1

Stock Image

STGWT40H65FB
STMicroelectronics

5 : USD 1.5808

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 2 1 3 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage: V = 1.6 V (typ) I = 40 A CE(sat) C Safe paralleling 3 2 1 Tight parameter distribution TO-247 long leads Low thermal resistance C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters Chargers E(3) G1C2TE3 Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGFW40H65FB STGW40H65FB STGWA40H65FB DS9908 - Rev 8 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 98.6 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink V 3.5 kV ISO (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF R Thermal resistance, junction-to-case 0.53 1.52 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9908 - Rev 8 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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