Product Information

TDM3421

TDM3421 electronic component of Techcode

Datasheet
MOSFET P Trench 30V 32A (Tc) 2.3V @ 250uA 19 mΩ @ 10.5A,10V PPAK-8_3x3mm RoHS
Manufacturer: Techcode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3058 ea
Line Total: USD 1.53

2051 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
169 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 5
Multiples : 5

Stock Image

TDM3421
Techcode

5 : USD 0.2796
50 : USD 0.2248
150 : USD 0.2013
500 : USD 0.172
3000 : USD 0.1462
6000 : USD 0.1383

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TDM3421 is a MOSFET P Trench 30V 32A (Tc) 2.3V @ 250uA 19 mΩ @ 10.5A,10V PPAK-8_3x3mm RoHS manufactured by Techcode. It is a power transistor designed to save power and reduce losses for a wide range of applications. The device is packaged in a industry-standard PPAK-8_3x3mm RoHS device, allowing for easy integration into existing designs and boards. It features a drain current of 32A at 30V VDS and a maximum operating temperature of 175C. The TDM3421 includes an integrated parasitic diode and a fast body diode, providing both over-voltage protection and ESD protection. The device also features a low on-state resistance of 19 mOhm @ 10.5A and a maximum gate charge of 125 nC, enabling low power dissipation and reduced switching losses.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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