BPV10 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 94 8390 Angle of half sensitivity: = 20 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION BPV10 is a PIN photodiode with high speed and high radiant APPLICATIONS sensitivity in clear, T-1 plastic package. It is sensitive to High speed photo detector visible and near infrared radiation. PRODUCT SUMMARY COMPONENT I (A) () (nm) ra 0.1 BPV10 70 20 380 to 1100 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV10 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from body T 260 C sd 2 Thermal resistance junction to ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 2.0, 19-Mar-2021 Document Number: 81502 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV10 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1.0 1.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 - - V R (BR) Reverse dark current V = 20 V, E = 0 I -1 5 nA R ro V = 0 V, f = 1 MHz, E = 0 C -11 - pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C -3.8 - pF R D E = 1 klx V - 480 - mV A O Open circuit voltage 2 E = 1 mW/cm , = 950 nm V - 450 - mV e O E = 1 klx I -80 - A A K Short circuit current 2 E = 1 mW/cm , = 950 nm I -65 - A e K E = 1 klx, V = 5 V I -85 - A A R ra 2 Reverse light current E = 1 mW/cm , = 950 nm, e I 38 70 - A ra V = 5 V R Absolute spectral sensitivity V = 5 V, = 950 nm s()- 0.55 - A/W R Angle of half sensitivity - 20 - Wavelength of peak sensitivity - 920 - nm p Range of spectral bandwidth - 380 to 1100 - nm 0.1 Quantum efficiency = 950 nm -72 - % -14 Noise equivalent power V = 20 V, = 950 nm NEP - 3 x 10 -W/Hz R 12 Detectivity V = 20 V, = 950 nm D - 3 x 10 -cmHz/W R Rise time V = 10 V, R = 50 , = 830 nm t -80 - ns R L r Fall time V = 10 V, R = 50 , = 830 nm t -60 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V = 5 V 1.2 R = 950 nm 100 1.0 10 0.8 V = 20 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8436 T - Ambient Temperature (C) 94 8416 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 2.0, 19-Mar-2021 Document Number: 81502 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra, rel