Product Information

BPV22N

BPV22N electronic component of Vishay

Datasheet
PHOTODIODE, PIN
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2681 ea
Line Total: USD 1.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BPV22N
Vishay

1 : USD 1.4467
10 : USD 0.8943
25 : USD 0.8281
50 : USD 0.761
100 : USD 0.694
500 : USD 0.6484

Read More Specifications

     
Manufacturer
Product Category
Peak Wavelength
Rise Time
Dark Current
Brand
No. Of Pins
Diode Case Style
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity ±
Operating Temperature Min
Operating Temperature Max
Active Area
Breakdown Voltage Vbr
External Depth
External Length / Height
External Width
Fall Time Tf
Forward Voltage Vf Max
Junction Temperature Tj Max
Junction Temperature Tj Min
Lead Length
Lead Spacing
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Storage Temperature Max
Storage Temperature Min
Wavelength Typ
LoadingGif

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Additional Infomation About Product

BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: side view Dimensions (in mm): 4.5 x 5 x 6 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters Fast response times 94 8633 Angle of half sensitivity: = 60 Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BPV22NF is a PIN photodiode with high speed and high APPLICATIONS radiant sensitivity in a black, plastic package with side view High speed detector for infrared radiation lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. The lens achieves 80 % Infrared remote control and free air data transmission of sensitivity improvement in comparison with flat package. systems, e.g. in combination with TSFFxxxx series IR BPV22NFL has long leads, other specifications like emitters BPV22NF. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV22NF 85 60 790 to 1050 BPV22NFL 85 60 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.9, 21-Feb-12 Document Number: 81509 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Serial resistance V = 12 V, f = 1 MHz R 400 R S 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 370 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 80 A e k 2 E = 1 mW/cm , = 870 nm, e Reverse light current I 55 85 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I TK 0.1 %/K ra Ira V = 10 V R V = 5 V, = 870 nm s()0.57 A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s()0.6 A/W R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 Quantum efficiency = 950 nm 90 % -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R 12 Detectivity V = 10 V, = 950 nm D* 6 x 10 cmHz/W R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f V = 12 V, R = 1 k, = 870 nm f 4MHz R L c Cut-off frequency V = 12 V, R = 1 k, = 950 nm f 1MHz R L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.9, 21-Feb-12 Document Number: 81509 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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