ACTT2W-800ETNF

ACTT2W-800ETN Enhanced, high temperature ACTT power switch 22 June 2017 Product data sheet 1. General description Planar passivated AC Thyristor Triac power switch in a SOT223 surface-mountable plastic package with self-protective capabilities against low and high energy transients. Thisseries ET triac will commutate the full RMS current at the maximum rated junction temperature (T = j(max) 150 C) without the aid of a snubber. It is used in applications wherehigh junction operating temperature capabilit is required. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability High junction operating temperature capability (T = 150 C) j(max) High minimum I for guaranteed immunity to gate noise GT Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Less sensitive gate for high noise immunity Triggering in three quadrants only Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient Package meets UL94V0 flammability requirement Package is RoHS compliant 3. Applications AC pumps and fans High power solenoids Highly inductive, resistive and safety loads Large and small appliances (White Goods) Applications subject to high temperature (T = 150 C) j(max) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 106 C Fig. 1 - - 2 A T(RMS) sp Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 18 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 pWeEn Semiconductors ACTT2W-800ETN Enhanced, high temperature ACTT power switch Symbol Parameter Conditions Min Typ Max Unit full sine wave T = 25 C - - 20 A j(init) t = 16.7 ms p T junction temperature - - 150 C j V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6 Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 10 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 10 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 10 mA D T T = 25 C Fig. 8 j I holding current V = 12 V T = 25 C Fig. 10 - - 10 mA H D j V on-state voltage I = 3 A T = 25 C Fig. 11 - - 2 V T T j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit V = 536 V T = 150 C exponential 200 - - V/s DM j waveform gate open circuit dI /dt rate of change of V = 400 V T = 150 C I = 2 A 1 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com snubberless condition V = 400 V T = 150 C I = 2 A 1.5 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 2 A 3 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 CM common 4 LD 2 LD load G 3 G gate CM 1 2 3 mb mb mounting base connected to 003aaf296 SC-73 (SOT223) load ACTT2W-800ETN All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 22 June 2017 2 / 14