Product Information

WSB5546N-2/TR

WSB5546N-2/TR electronic component of Will Semiconductor

Datasheet
Schottky Barrier Diodes (SBD) DFN1006-2L RoHS

Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1293 ea
Line Total: USD 0.65

9210 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1658 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10

Stock Image

WSB5546N-2/TR
Will Semiconductor

10 : USD 0.0865
100 : USD 0.0706
300 : USD 0.0625
1000 : USD 0.0567
5000 : USD 0.0518
10000 : USD 0.0495

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max @ If
Reverse Voltage Vr
Forward Voltage Vf@If
Average Rectified Current Io
LoadingGif

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The WSB5546N-2/TR is an electronic part consisting of Schottky Barrier Diodes (SBDs) in DFN1006-2L (Typical Rectifying Small Outline Package) package designated by Will Semiconductor. It features a 1.0A continuous forwarding current with a max 2.0A forward surge current across from -40 to +125 °C junction temperature. This SBD consists of a pair of highly reliable silicon Schottky barriers providing fast switching capability for voltage clamping in mobile applications. The RoHS certification provides a safe and reliable performance assurance. It is suitable for applications subject to high temperature operation such as powering mobile phones, PDAs and digital media players.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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