X-On Electronics has gained recognition as a prominent supplier of W29N02GVBIAA nand flash across the USA, India, Europe, Australia, and various other global locations. W29N02GVBIAA nand flash are a product manufactured by Winbond. We provide cost-effective solutions for nand flash, ensuring timely deliveries around the world.

W29N02GVBIAA Winbond

W29N02GVBIAA electronic component of Winbond
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See Product Specifications
Part No.W29N02GVBIAA
Manufacturer: Winbond
Category:NAND Flash
Description: NAND Flash Serial 3V 2G-bit 256M x 8 25ns
Datasheet: W29N02GVBIAA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 4.0243 ea
Line Total: USD 12.07

Availability - 0
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 210
Multiples : 1
210 : USD 6.4155
250 : USD 6.3513
500 : USD 6.2886
1000 : USD 6.2258
2000 : USD 6.163
2500 : USD 6.1015
3000 : USD 6.0401
4000 : USD 5.9801
5000 : USD 5.92
10000 : USD 5.8613

0 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 210
Multiples : 210
210 : USD 4.6489
420 : USD 4.6247

0 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3
Multiples : 3
3 : USD 4.0243
10 : USD 3.4365
25 : USD 3.3816
50 : USD 3.2264
100 : USD 3.0432
250 : USD 2.9823

0 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3
Multiples : 3
3 : USD 4.0243
10 : USD 3.4365
25 : USD 3.3816
50 : USD 3.2263
100 : USD 3.0432
250 : USD 2.9823

     
Manufacturer
Product Category
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Programmable
Boot Type
Cell Type
Address Bus
Operating Temp Range
Program/Erase Volt Typ
Density
Rad Hardened
Operating Temperature Classification
Access Time Max
Operating Supply Voltage Typ
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We are delighted to provide the W29N02GVBIAA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N02GVBIAA and other electronic components in the NAND Flash category and beyond.

W29N02GV W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY th Release Date: December 4 , 2017 1 Revision C W29N02GV Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................ 7 2. FEATURES .................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS ....................................................................... 8 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 8 3.2 Pin assignment 63 ball VFBGA (x8) ..................................................................................... 9 3.3 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................. 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) ........................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM ....................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION ........................................................................................... 13 6.1 Array Organization (x8) ....................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................ 14 8. COMMAND TABLE ...................................................................................................................... 15 9. DEVICE OPERATIONS ............................................................................................................... 17 9.1 READ operation .................................................................................................................. 17 9.1.1 PAGE READ (00h-30h) ........................................................................................................ 17 9.1.2 CACHE READ OPERATIONS .............................................................................................. 17 9.1.3 TWO PLANE READ (00h-00h-30h) ...................................................................................... 21 9.1.4 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 23 9.1.5 READ ID (90h) ...................................................................................................................... 25 9.1.6 READ PARAMETER PAGE (ECh) ....................................................................................... 26 9.1.7 READ STATUS (70h) ........................................................................................................... 28 9.1.8 READ STATUS ENHANCED (78h) ...................................................................................... 30 9.1.9 READ UNIQUE ID (EDh) ...................................................................................................... 31 9.2 PROGRAM operation ......................................................................................................... 32 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 32 9.2.2 SERIAL DATA INPUT (80h) ................................................................................................. 32 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 33 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 33 9.2.5 TWO PLANE PAGE PROGRAM .......................................................................................... 35 9.3 COPY BACK operation ....................................................................................................... 38 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 38 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 38 9.3.3 TWO PLANE READ for COPY BACK ................................................................................... 39 9.3.4 TWO PLANE PROGRAM for COPY BACK .......................................................................... 39 9.4 BLOCK ERASE operation .................................................................................................. 43 th Release Date: December 4 , 2017 2 Revision C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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