X-On Electronics has gained recognition as a prominent supplier of W29N02GZSIBA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N02GZSIBA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N02GZSIBA Winbond

W29N02GZSIBA electronic component of Winbond
W29N02GZSIBA Winbond
W29N02GZSIBA NAND Flash
W29N02GZSIBA  Semiconductors

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See Product Specifications
Part No. W29N02GZSIBA
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 4G-bit NAND flash, 3V x 8bit
Datasheet: W29N02GZSIBA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.082
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 5.7714
10 : USD 3.8712
25 : USD 3.7841
50 : USD 3.7515
100 : USD 3.4253
250 : USD 3.4144
500 : USD 3.3274
1000 : USD 3.1644
5000 : USD 2.9468
N/A

Obsolete
0
MOQ : 9
Multiples : 9
9 : USD 3.8131
N/A

Obsolete
   
Manufacturer
Product Category
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We are delighted to provide the W29N02GZSIBA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N02GZSIBA and other electronic components in the NAND Flash category and beyond.

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W29N02GW/Z W29N02GW/Z 2G-BIT 1.8V NAND FLASH MEMORY th Release Date: August 31 2018 1 Revision F W29N02GW/Z Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 7 2. FEATURES ....................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 8 3.1 Pin Assignment 48-pin TSOP ............................................................................................... 8 3.2 Pin Assignment 63 ball VFBGA (x8) .................................................................................... 9 3.3 Pin Assignment 63 ball VFBGA (x16) ................................................................................ 10 3.4 Pin Descriptions .................................................................................................................. 11 4. PIN DESCRITPIONS ...................................................................................................................... 12 4.1 Chip Enable ( CE) .............................................................................................................. 12 4.2 Write Enable ( WE) ............................................................................................................ 12 4.3 Read Enable ( RE) ............................................................................................................ 12 4.4 Address Latch Enable (ALE) .............................................................................................. 12 4.5 Command Latch Enable (CLE) .......................................................................................... 12 4.6 Write Protect ( WP) ............................................................................................................ 12 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 12 4.8 Input and Output (I/Ox) ....................................................................................................... 12 5. BLOCK DIAGRAM .......................................................................................................................... 13 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 14 6.1 Array Organization (x8) ...................................................................................................... 14 6.2 Array Organization (x16) .................................................................................................... 15 7. MODE SELECTION TABLE ........................................................................................................... 16 8. COMMAND TABLE......................................................................................................................... 17 9. DEVICE OPERATIONS .................................................................................................................. 18 9.1 READ Operation ................................................................................................................. 18 9.1.1 PAGE READ (00h-30h)......................................................................................................... 18 9.1.2 TWO PLANE READ (00h-00h-30h) ...................................................................................... 18 9.1.3 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 20 9.1.4 READ ID (90h) ...................................................................................................................... 21 9.1.5 READ PARAMETER PAGE (ECh) ....................................................................................... 22 9.1.6 READ STATUS (70h)............................................................................................................ 24 9.1.7 READ STATUS ENHANCED (78h) ...................................................................................... 25 9.1.8 READ UNIQUE ID (EDh) ...................................................................................................... 27 9.2 PROGRAM Operation ........................................................................................................ 28 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 28 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 28 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 29 9.2.4 TWO PLANE PAGE PROGRAM .......................................................................................... 29 9.3 COPY BACK Operation ...................................................................................................... 31 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 31 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 31 9.3.3 TWO PLANE READ for COPY BACK ................................................................................... 32 9.3.4 TWO PLANE PROGRAM for COPY BACK .......................................................................... 32 9.4 BLOCK ERASE Operation ................................................................................................. 36 th Release Date: August 31 2018 2 Revision F

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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